| No. |
Part Name |
Description |
Manufacturer |
| 61 |
2912A |
PCM TRANSMIT/RECEIVE FILTER |
Intel |
| 62 |
2N1912 |
V(rrm/drm): 150V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 63 |
2N1912 |
Silicon Controlled Rectifier |
Microsemi |
| 64 |
2N1912 |
THYRISTOR |
Motorola |
| 65 |
2N1912 |
Thyristor SCR 150V 1.6KA 3-Pin TO-209AA |
New Jersey Semiconductor |
| 66 |
2N1912 |
Phase Control SCR 70 Amoeres Average(110 RMS) 600 Volts |
Powerex Power Semiconductors |
| 67 |
2N2912 |
PNP high-speed, high-frequency power transistor |
Motorola |
| 68 |
2N2912 |
Germanium PNP Transistor |
Motorola |
| 69 |
2N3912 |
Silicon PNP Transistor |
Motorola |
| 70 |
2N4900 |
Silicon PNP Power Transistor, TO-66 package, NPN Complement 2N4912 |
Silicon Transistor Corporation |
| 71 |
2N4912 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 72 |
2N4912 |
POWER TRANSISTORS(1A,80V,25W) |
MOSPEC Semiconductor |
| 73 |
2N4912 |
Medium-power NPN silicon transistor |
Motorola |
| 74 |
2N4912 |
Silicon NPN Transistor |
Motorola |
| 75 |
2N4912 |
Trans GP BJT NPN 80V 1A 3-Pin(2+Tab) TO-66 Sleeve |
New Jersey Semiconductor |
| 76 |
2N4912 |
Silicon NPN Power Transistors TO-66 package |
Savantic |
| 77 |
2N4912 |
Silicon NPN power transistor, TO-66 package, PNP Complement 2N4900 |
Silicon Transistor Corporation |
| 78 |
2N4912X |
NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE |
SemeLAB |
| 79 |
2N5912 |
Dual N-Channel JFET High Frequency Amplifier |
Calogic |
| 80 |
2N5912 |
Dual N-Channel Junction Field-Effect Transistor |
CCSIT-CE |
| 81 |
2N5912 |
Dual N-Channel silicon junction field-effect transistor |
InterFET Corporation |
| 82 |
2N5912 |
Dual N-channel JFET. High frequency amplifier. |
Intersil |
| 83 |
2N5912 |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
| 84 |
2N5912 |
Panel mount light emitting diode visible yellow PN gallium phosphide |
Motorola |
| 85 |
2N5912 |
N-Channel FETs - wide band - low noise dual JFETs |
National Semiconductor |
| 86 |
2N5912 |
N-CHANNEL DUAL SILICON JUNCTION FET |
New Jersey Semiconductor |
| 87 |
2N5912 |
Matched High Gain |
Vishay |
| 88 |
2N5912C |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
| 89 |
2N5912_D |
Dual N-channel JFET. High frequency amplifier. |
Intersil |
| 90 |
2N5912_W |
Dual N-channel JFET. High frequency amplifier. |
Intersil |
| | | |
