No. |
Part Name |
Description |
Manufacturer |
61 |
1SMB5954 |
SURFACE MOUNT SILICON ZENER DIODE |
TRSYS |
62 |
1SMB5954A |
SILICON ZENER DIODES |
EIC discrete Semiconductors |
63 |
1SMB5954A |
1.5 watt plastic surfase mount silicon zener diode. Nom zener voltage 160 V. +-10% tolerance. |
Motorola |
64 |
1SMB5954B |
3.0W SURFACE MOUNT POWER ZENER DIODE |
Diodes |
65 |
1SMB5954B |
1.5 watt plastic surfase mount silicon zener diode. Nom zener voltage 160 V. +-5% tolerance. |
Motorola |
66 |
1SMB5954B |
3 Watt Plastic Surface Mount Silicon Zener Diodes |
ON Semiconductor |
67 |
1SMB5954BT3 |
PLASTIC SURFACE MOUNT ZENER DIODES 3 WATTS 3.3.200 VOLTS |
Motorola |
68 |
1SMB5954BT3 |
3 Watt Plastic Surface Mount Silicon Zener Diodes |
ON Semiconductor |
69 |
2N1954 |
Germanium PNP Transistor |
Motorola |
70 |
2N2954 |
Silicon NPN Transistor |
Motorola |
71 |
2N3954 |
N-Channel dual silicon junction field-effect transistor |
InterFET Corporation |
72 |
2N3954 |
Monolithic Dual N-Channel JFET General Purpose Amplifier |
Intersil |
73 |
2N3954 |
Low Noise, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
74 |
2N3954 |
N-Channel Junction (Field-Effect Transistor) |
Motorola |
75 |
2N3954A |
Monolithic Dual N-Channel JFET General Purpose Amplifier |
Intersil |
76 |
2N3954A |
Low Noise, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
77 |
2N3954A |
N-Channel Junction (Field-Effect Transistor) |
Motorola |
78 |
2N4954 |
Silicon NPN Transistor |
Motorola |
79 |
2N4954 |
Trans GP BJT NPN 30V 1A 3-Pin TO-92 |
New Jersey Semiconductor |
80 |
2N5954 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
81 |
2N5954 |
Silicon P-N-P medium-power transistor. -90V, 40W. |
General Electric Solid State |
82 |
2N5954 |
Trans GP BJT PNP 80V 6A 3-Pin(2+Tab) TO-66 Sleeve |
New Jersey Semiconductor |
83 |
2N5954 |
Silicon PNP Power Transistors TO-66 package |
Savantic |
84 |
2N5954 |
Silicon PNP Power Transistor, TO-66 package, NPN Complement 2N6374 |
Silicon Transistor Corporation |
85 |
2N6374 |
Silicon NPN power transistor, TO-66 package, PNP Complement 2N5954 |
Silicon Transistor Corporation |
86 |
2SA1954 |
Transistor Silicon PNP Epitaxial Type (PCT process) General Purpose Amplifier Applications Switching and Muting Switch Application |
TOSHIBA |
87 |
2SA954 |
PNP SILICON TRANSISTOR |
NEC |
88 |
2SA954 |
Audio frequency amplifier. Collector-base voltage: Vcbo = -80V. Collector-emitter voltage: Vceo = -80V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 600mW. |
USHA India LTD |
89 |
2SB0954 |
Silicon PNP epitaxial planar type power transistor |
Panasonic |
90 |
2SB0954A |
Silicon PNP epitaxial planar type power transistor |
Panasonic |
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