No. |
Part Name |
Description |
Manufacturer |
61 |
1SMB5955 |
180 V, 1.5 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
62 |
1SMB5955 |
SURFACE MOUNT SILICON ZENER DIODE |
TRSYS |
63 |
1SMB5955A |
SILICON ZENER DIODES |
EIC discrete Semiconductors |
64 |
1SMB5955A |
1.5 watt plastic surfase mount silicon zener diode. Nom zener voltage 180 V. +-10% tolerance. |
Motorola |
65 |
1SMB5955B |
3.0W SURFACE MOUNT POWER ZENER DIODE |
Diodes |
66 |
1SMB5955B |
1.5 watt plastic surfase mount silicon zener diode. Nom zener voltage 180 V. +-5% tolerance. |
Motorola |
67 |
1SMB5955B |
3 Watt Plastic Surface Mount Silicon Zener Diodes |
ON Semiconductor |
68 |
1SMB5955BT3 |
PLASTIC SURFACE MOUNT ZENER DIODES 3 WATTS 3.3.200 VOLTS |
Motorola |
69 |
1SMB5955BT3 |
3 Watt Plastic Surface Mount Silicon Zener Diodes |
ON Semiconductor |
70 |
2955-2 |
HIGH-CURRENT HALF-BRIDGE POWER DRIVER |
Allegro MicroSystems |
71 |
2N1955 |
Germanium PNP Transistor |
Motorola |
72 |
2N2955 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
73 |
2N2955 |
Germanium PNP Transistor |
Motorola |
74 |
2N2955 |
SILICON PNP TRANSISTOR |
Unisonic Technologies |
75 |
2N3055_MJ2955 |
15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS |
Motorola |
76 |
2N3955 |
Dual N-Channel Junction Field-Effect Transistor |
CCSIT-CE |
77 |
2N3955 |
N-Channel dual silicon junction field-effect transistor |
InterFET Corporation |
78 |
2N3955 |
Monolithic Dual N-Channel JFET General Purpose Amplifier |
Intersil |
79 |
2N3955 |
Low Noise, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
80 |
2N3955 |
N-Channel Junction (Field-Effect Transistor) |
Motorola |
81 |
2N3955 |
N-Channel Monolithic Dual JFET |
National Semiconductor |
82 |
2N3955A |
Monolithic Dual N-Channel JFET General Purpose Amplifier |
Intersil |
83 |
2N3955A |
N-Channel Junction (Field-Effect Transistor) |
Motorola |
84 |
2N3955A |
N-Channel Monolithic Dual JFET |
National Semiconductor |
85 |
2N4955 |
Silicon NPN Transistor |
Motorola |
86 |
2N5955 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
87 |
2N5955 |
Silicon P-N-P medium-power transistor. -70V, 40W. |
General Electric Solid State |
88 |
2N5955 |
1.5 Watt hermetically sealed glass silicon zener diode 180V |
Motorola |
89 |
2N5955 |
Trans GP BJT PNP 60V 6A 3-Pin(2+Tab) TO-66 Sleeve |
New Jersey Semiconductor |
90 |
2N5955 |
Silicon PNP Medium-Power Transistor |
RCA Solid State |
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