No. |
Part Name |
Description |
Manufacturer |
61 |
1N996 |
25 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
62 |
1N996 |
GOLD BOND GERMANIUM DIODE |
ITT Semiconductors |
63 |
1N996 |
Germanium Signal Diode |
Motorola |
64 |
2N1996 |
Germanium NPN Transistor |
Motorola |
65 |
2N2996 |
Germanium PNP Transistor |
Motorola |
66 |
2N3996 |
NPN Transistor |
Microsemi |
67 |
2N3996 |
Silicon NPN Transistor |
Motorola |
68 |
2N3996 |
Trans GP BJT NPN 80V 5A 4-Pin TO-111 |
New Jersey Semiconductor |
69 |
2N3996 |
Silicon NPN Power Transistor, TO-111 (isolated collector) package |
Silicon Transistor Corporation |
70 |
2N3996 |
100 V, 5 A high speed NPN transistor |
Solid State Devices Inc |
71 |
2N3996 |
NPN Silicon High Power Transistor (over 25 watts) |
Transitron Electronic |
72 |
2N4996 |
Silicon NPN Transistor |
Motorola |
73 |
2N4996 |
Trans GP BJT NPN 80V 2A 3-Pin TO-59 |
New Jersey Semiconductor |
74 |
2N996 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
75 |
2N996 |
PNP silicon transistor |
Motorola |
76 |
2N996 |
Silicon PNP Transistor |
Motorola |
77 |
2SB996 |
Silicon PNP triple diffused power transistor, complementary to 2SD1356 |
TOSHIBA |
78 |
2SC2996 |
Transistor Silicon NPN Epitaxial Type (PCT process) FM/AM RF, MIX, Local, IF High Frequency Amplifier Applications |
TOSHIBA |
79 |
2SC3996 |
Ultrahigh-Definition Display Horizontal Deflection Output Applications |
SANYO |
80 |
2SC996 |
Radio Frequency Transistor specification table |
TOSHIBA |
81 |
2SC996 |
Silicon NPN triple diffused MESA transistor, color TV video output applications |
TOSHIBA |
82 |
2SD1356 |
Silicon NPN triple diffused power transistor, complementary to 2SB996 |
TOSHIBA |
83 |
2SD1996 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
84 |
2SK0996 |
Silicon N-channel Power F-MOS FET |
Panasonic |
85 |
2SK12996 |
N CHANNEL MOS TYPE (HIGH SPEED/ HIGH VOLTAGE SWITCHING/ CHOPPER REGULATOR/ DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) |
TOSHIBA |
86 |
2SK2996 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) DC .DC Converter, Relay Drive and Motor Drive Applications |
TOSHIBA |
87 |
2SK996 |
Silicon N-channel Power F-MOS FET |
Panasonic |
88 |
5962-9960101Q2A |
180-MHz High Output Drive Voltage-Feedback Amplifier |
Texas Instruments |
89 |
5962-9960101QPA |
180-MHz High Output Drive Voltage-Feedback Amplifier |
Texas Instruments |
90 |
5962-9960601QUA |
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish hot solder dipped. Total dose none. |
Aeroflex Circuit Technology |
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