| No. |
Part Name |
Description |
Manufacturer |
| 61 |
FQU9N25TU |
250V N-Channel QFET |
Fairchild Semiconductor |
| 62 |
IRFR9N20D |
200V Single N-Channel HEXFET Power MOSFET in a D-Pak package |
International Rectifier |
| 63 |
IRFR9N20DTR |
200V Single N-Channel HEXFET Power MOSFET in a D-Pak package |
International Rectifier |
| 64 |
IRFR9N20DTRL |
200V Single N-Channel HEXFET Power MOSFET in a D-Pak package |
International Rectifier |
| 65 |
IRFR9N20DTRLPBF |
200V Single N-Channel HEXFET Power MOSFET in a D-Pak package |
International Rectifier |
| 66 |
IRFR9N20DTRPBF |
200V Single N-Channel HEXFET Power MOSFET in a D-Pak package |
International Rectifier |
| 67 |
IRFR9N20DTRR |
200V Single N-Channel HEXFET Power MOSFET in a D-Pak package |
International Rectifier |
| 68 |
IRFU9N20D |
200V Single N-Channel HEXFET Power MOSFET in a I-Pak package |
International Rectifier |
| 69 |
IRFU9N20DPBF |
200V Single N-Channel HEXFET Power MOSFET in a I-Pak package |
International Rectifier |
| 70 |
ISL9N2357D3ST |
30V, 0.007 Ohm, 35A, N-Channel UltraFET � Trench Power MOSFET |
Fairchild Semiconductor |
| 71 |
IXLF19N220A |
2200V high voltage IGBT |
IXYS |
| 72 |
IXLF19N250A |
Low Saturation Voltage Types |
IXYS |
| 73 |
KF19N20D |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
| 74 |
KF19N20F |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
| 75 |
KF9N25D |
N CHANNEL MOS FIELD |
Korea Electronics (KEC) |
| 76 |
KF9N25F |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
| 77 |
MTB9N25E |
TMOS POWER FET 9.0 AMPERES 250 VOLTS |
Motorola |
| 78 |
MTB9N25E |
9 Amp D2PAK Surface Mount Products, N-Channel, VDSS 250 |
ON Semiconductor |
| 79 |
MTB9N25E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 80 |
MTP9N25 |
TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM |
Motorola |
| 81 |
MTP9N25E |
TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM |
Motorola |
| 82 |
MTP9N25E |
9 Amp TO-220AB, N-Channel, VDSS 250 |
ON Semiconductor |
| 83 |
MTP9N25E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 84 |
PB-IRFR9N20D |
Leaded 200V Single N-Channel HEXFET Power MOSFET in a D-Pak package |
International Rectifier |
| 85 |
PB-IRFU9N20D |
Leaded 200V Single N-Channel HEXFET Power MOSFET in a I-Pak package |
International Rectifier |
| 86 |
SUD19N20-90 |
N-Channel 200-V (D-S) 175C MOSFET |
Vishay |
| 87 |
SUM09N20-270 |
N-Channel 200-V (D-S) 175C MOSFET |
Vishay |
| 88 |
TSM19N20CP |
Discrete Devices-MOSFET-Single N-Channel |
Taiwan Semiconductor |
| 89 |
UPC79N24H |
THREE TERMINAL NEGATIVE VOLTAGE REGULATOR |
NEC |
| 90 |
VN0109N2 |
Trans MOSFET N-CH 90V 0.5A 3-Pin TO-92 |
New Jersey Semiconductor |
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