| No. |
Part Name |
Description |
Manufacturer |
| 61 |
1N5385B |
170 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 62 |
1N629 |
175 V, 500 mW general purpose diode |
BKC International Electronics |
| 63 |
1N6301 |
170 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 64 |
1N6301A |
170 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 65 |
1N6301C |
170 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 66 |
1N6301CA |
170 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 67 |
1S762H |
Silicon Difused Junction, Zener Diode Vz=17.0...21.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 68 |
1SMB2EZ170 |
170 V, 2 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
| 69 |
1SMB3EZ170 |
170 V, 3 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
| 70 |
1SMC5354 |
17 V, 5 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
| 71 |
1SMC5385 |
170 V, 5 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
| 72 |
2089-6219-00 |
1700-1900 MHz, Power divider, 2,3.4.6.8-way |
MA-Com |
| 73 |
2089-6319-00 |
1700-1900 MHz, Power divider, 2,3.4.6.8-way |
MA-Com |
| 74 |
2089-6419-00 |
1700-1900 MHz, Power divider, 2,3.4.6.8-way |
MA-Com |
| 75 |
2089-6619-00 |
1700-1900 MHz, Power divider, 2,3.4.6.8-way |
MA-Com |
| 76 |
2089-6819-00 |
1700-1900 MHz, Power divider, 2,3.4.6.8-way |
MA-Com |
| 77 |
20KW172 |
172.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 78 |
20KW172A |
172.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 79 |
2EZ170 |
170 V, 2 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 80 |
2EZ170 |
170 V, 0.5 A, 2 W, glass passivated junction silicon zener diode |
TRSYS |
| 81 |
2N6080 |
175MHz 12.5V NPN RF Transistor for FM mobile applications |
SGS Thomson Microelectronics |
| 82 |
2N6081 |
175MHz 12.5V NPN RF Transistor for FM mobile applications |
SGS Thomson Microelectronics |
| 83 |
2N6082 |
175MHz 12.5V NPN RF Transistor for FM mobile applications |
SGS Thomson Microelectronics |
| 84 |
2N6083 |
175MHz 12.5V NPN RF Transistor for FM mobile applications |
SGS Thomson Microelectronics |
| 85 |
2N6084 |
175MHz 12.5V NPN RF Transistor for FM mobile applications |
SGS Thomson Microelectronics |
| 86 |
3.0SMCJ170CA |
170 V, 1 mA, 3000 W, surface mount transient voltage suppressor |
Surge Components |
| 87 |
3032-6019-00 |
1700-1900 MHz, 3dB, 90 crossover hybrid coupler |
MA-Com |
| 88 |
3EZ170 |
170 V, 3 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 89 |
3KP100 |
Ppk=3000W, Vc=179V transient voltage suppressor |
MCC |
| 90 |
3KP100C |
Ppk=3000W, Vc=179V transient voltage suppressor |
MCC |
| | | |
