| No. |
Part Name |
Description |
Manufacturer |
| 61 |
1N5238B-G |
Zener Diodes, PD=0.5Watts, VZ=8.7V |
Comchip Technology |
| 62 |
1N5238BTR |
8.7V, 0.5W Zener Diode |
Fairchild Semiconductor |
| 63 |
1N5238B_T50A |
8.7V, 0.5W Zener Diode |
Fairchild Semiconductor |
| 64 |
1N5238B_T50R |
8.7V, 0.5W Zener Diode |
Fairchild Semiconductor |
| 65 |
1N5238C |
8.7 V, 20 mA, zener diode |
Leshan Radio Company |
| 66 |
1N5238D |
8.7 V, 20 mA, zener diode |
Leshan Radio Company |
| 67 |
1N5344B |
8.2 V, 150 mA, 5 W glass passivated zener diode |
Fagor |
| 68 |
1N5345B |
8.7 V, 150 mA, 5 W glass passivated zener diode |
Fagor |
| 69 |
1N5734B |
8.2V Voltage Reference Diode |
Philips |
| 70 |
1N6269 |
8.2 V, 10 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 71 |
1N6269A |
8.2 V, 10 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 72 |
1N6269C |
8.2 V, 10 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 73 |
1N6269CA |
8.2 V, 10 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 74 |
1N6374 |
8.00V; 100A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 75 |
1N6382 |
8.00V; 100A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 76 |
1N756 |
8.2 V, 400 mW silicon linear diode |
BKC International Electronics |
| 77 |
1N756A |
8.2 V, 400 mW silicon linear diode |
BKC International Electronics |
| 78 |
1N756A-1 |
8.2 V, 400 mW silicon zener diode |
BKC International Electronics |
| 79 |
1N756ATR |
8.2V, 0.5W Zener Diode |
Fairchild Semiconductor |
| 80 |
1N756A_T50A |
8.2V, 0.5W Zener Diode |
Fairchild Semiconductor |
| 81 |
1N756A_T50R |
8.2V, 0.5W Zener Diode |
Fairchild Semiconductor |
| 82 |
1N756B |
8.2 V, 20 mA, zener diode |
Leshan Radio Company |
| 83 |
1N756C |
8.2 V, 20 mA, zener diode |
Leshan Radio Company |
| 84 |
1N756D |
8.2 V, 20 mA, zener diode |
Leshan Radio Company |
| 85 |
1N831 |
Silicon Microwave S-band Mixer; NF=8.3 to 6.5 dB |
Motorola |
| 86 |
1N831A |
Silicon Microwave S-band Mixer; NF=8.3 to 6.5 dB |
Motorola |
| 87 |
1N831B |
Silicon Microwave S-band Mixer; NF=8.3 to 6.5 dB |
Motorola |
| 88 |
1N959A |
8.2 V, 15 mA, silicon planar zener diode |
Honey Technology |
| 89 |
1N959A |
8.2 V, zener diode |
Leshan Radio Company |
| 90 |
1N959B |
8.2 V, 15 mA, silicon planar zener diode |
Honey Technology |
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