| No. |
Part Name |
Description |
Manufacturer |
| 61 |
1SS344 |
Diode Silicon Epitaxial Schottky Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 62 |
1SS349 |
Diode Silicon Epitaxial Schottky Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 63 |
1SS352 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 64 |
1SS360 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 65 |
1SS360F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications |
TOSHIBA |
| 66 |
1SS361 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 67 |
1SS361F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications |
TOSHIBA |
| 68 |
1SS362 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 69 |
1SS368 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) |
TOSHIBA |
| 70 |
1SS382 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 71 |
1SS387 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 72 |
20CTH03 |
300V 20A HyperFast Discrete Diode in a TO-220AB package |
International Rectifier |
| 73 |
20CTH03-1 |
300V 20A HyperFast Discrete Diode in a TO-262 package |
International Rectifier |
| 74 |
20CTH03FP |
300V 20A HyperFast Discrete Diode in a TO-220 FullPack package |
International Rectifier |
| 75 |
20CTH03S |
300V 20A HyperFast Discrete Diode in a D2-Pak package |
International Rectifier |
| 76 |
22GQ100 |
30V 100A Hi-Rel Schottky Discrete Diode in a TO-254AA package |
International Rectifier |
| 77 |
24C04A |
The 24C04A is a 4K bit Serial Electrically Erasable PROM. The 24C04A features an I2C™ compatible 2-wire serial interface bus and hardware write protection for the upper half of the block. The 24C04A has a page write capabil |
Microchip |
| 78 |
25GQ045 |
35V 45A Hi-Rel Schottky Discrete Diode in a TO-254AA package |
International Rectifier |
| 79 |
2N1991 |
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 80 |
2N2194 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. |
SemeLAB |
| 81 |
2N2218 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. |
SemeLAB |
| 82 |
2N2219 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 83 |
2N2222ACSM |
HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 84 |
2N2222ACSM4 |
HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 85 |
2N2222ADCSM |
DUAL HIGH SPEED, MEDIUM POWER NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 86 |
2N2222AXCSM |
Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications |
SemeLAB |
| 87 |
2N2243A |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 88 |
2N2369A1 |
HIGH SPEED / MEDIUM POWER / NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED TO-18 PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 89 |
2N2369ACSM |
HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 90 |
2N2369ADCSM |
DUAL HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE |
SemeLAB |
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