| No. |
Part Name |
Description |
Manufacturer |
| 61 |
2N2574 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 62 |
2N2575 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 63 |
2N2576 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 64 |
2N2577 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 65 |
2N2578 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 66 |
2N2579 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 67 |
2N3425 |
Dual NPN silicon transistor designed for use as a high-frequency sense amplifier |
Motorola |
| 68 |
2N4117A |
Ultra High Input Impedance N-Channel JFET Amplifier |
Linear Systems |
| 69 |
2N4118A |
Ultra High Input Impedance N-Channel JFET Amplifier |
Linear Systems |
| 70 |
2N4119A |
Ultra High Input Impedance N-Channel JFET Amplifier |
Linear Systems |
| 71 |
2N4208 |
PNP small signal ultra high speed saturated switch. |
Fairchild Semiconductor |
| 72 |
2N4209 |
PNP small signal ultra high speed saturated switch. |
Fairchild Semiconductor |
| 73 |
2N6306 |
8A high-voltage NPN silicon 125W power NPN transistor |
Motorola |
| 74 |
2N6307 |
8A high-voltage NPN silicon 125W power NPN transistor |
Motorola |
| 75 |
2N6308 |
8A high-voltage NPN silicon 125W power NPN transistor |
Motorola |
| 76 |
2N6497 |
5A high voltage NPN silicon 80W power transistor |
Motorola |
| 77 |
2N6498 |
5A high voltage NPN silicon 80W power transistor |
Motorola |
| 78 |
2N6499 |
5A high voltage NPN silicon 80W power transistor |
Motorola |
| 79 |
2N709 |
NPN silicon epitaxial planar transistor, extremely fast switching and ultra high frequency applications |
ICCE |
| 80 |
2N709A |
NPN silicon epitaxial planar transistor, extremely fast switching and ultra high frequency applications |
ICCE |
| 81 |
2SA1209 |
160V/140mA High-Voltage Switching and AF 100W Predriver Applications |
SANYO |
| 82 |
2SA1289 |
60V/5A High-Speed Switching Applications |
SANYO |
| 83 |
2SA1290 |
60V/7A High-Speed Switching Applications |
SANYO |
| 84 |
2SA1291 |
60V/10A High-Speed Switching Applications |
SANYO |
| 85 |
2SA1292 |
60V/15A High-Speed Switching Applications |
SANYO |
| 86 |
2SA1469 |
PNP Epitaxial Planar Silicon Transistors 60V/5A High-Speed Switching Applications |
SANYO |
| 87 |
2SA1470 |
PNP Epitaxial Planar Silicon Transistors 60V/7A High-Speed Switching Applications |
SANYO |
| 88 |
2SA1471 |
PNP Epitaxial Planar Silicon Transistors 60V/10A High-Speed Switching Applications |
SANYO |
| 89 |
2SA2023 |
PNP Epitaxial Planar Silicon Transistors 60V / 5A High-Speed Switching Applications |
SANYO |
| 90 |
2SA739 |
Silicon PNP triple diffused MESA high voltage switching transistor |
TOSHIBA |
| | | |
