No. |
Part Name |
Description |
Manufacturer |
61 |
2N2579 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
62 |
2N4117A |
Ultra High Input Impedance N-Channel JFET Amplifier |
Linear Systems |
63 |
2N4118A |
Ultra High Input Impedance N-Channel JFET Amplifier |
Linear Systems |
64 |
2N4119A |
Ultra High Input Impedance N-Channel JFET Amplifier |
Linear Systems |
65 |
2N4208 |
PNP small signal ultra high speed saturated switch. |
Fairchild Semiconductor |
66 |
2N4209 |
PNP small signal ultra high speed saturated switch. |
Fairchild Semiconductor |
67 |
2N6497 |
5A high voltage NPN silicon 80W power transistor |
Motorola |
68 |
2N6498 |
5A high voltage NPN silicon 80W power transistor |
Motorola |
69 |
2N6499 |
5A high voltage NPN silicon 80W power transistor |
Motorola |
70 |
2N709 |
NPN silicon epitaxial planar transistor, extremely fast switching and ultra high frequency applications |
ICCE |
71 |
2N709A |
NPN silicon epitaxial planar transistor, extremely fast switching and ultra high frequency applications |
ICCE |
72 |
2SA739 |
Silicon PNP triple diffused MESA high voltage switching transistor |
TOSHIBA |
73 |
2SC1927 |
NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE |
NEC |
74 |
2SC2204 |
Silicon NPN triple diffused MESA high power switching transistor |
TOSHIBA |
75 |
2SC2220 |
Silicon NPN triple diffused MESA high power switching transistor |
TOSHIBA |
76 |
2SC2951 |
The ASI 2SC2951 is a High Frequency Transistor Designed for General Purpose Oscillator Applications up to 10 GHz. |
Advanced Semiconductor |
77 |
2SC2952 |
The 2SC2592 is a High Frequency Transistor Designed for General Purpose VHF-UHF Amplifier Applications. |
Advanced Semiconductor |
78 |
2SC3162 |
High Voltage Ultra High Speed Switching Transistors |
Shindengen |
79 |
2SC3163 |
High Voltage Ultra High Speed Switching Transistors |
Shindengen |
80 |
2SC3165 |
High Voltage Ultra High Speed Switching Transistors |
Shindengen |
81 |
2SC3166 |
High Voltage Ultra High Speed Switching Transistors |
Shindengen |
82 |
2SC3167 |
High Voltage Ultra High Speed Switching Transistors |
Shindengen |
83 |
2SC3168 |
High Voltage Ultra High Speed Switching Transistors |
Shindengen |
84 |
2SC3219 |
High Voltage Ultra High Speed Switching Transistors |
Shindengen |
85 |
2SC3220 |
High Voltage Ultra High Speed Switching Transistors |
Shindengen |
86 |
2SC3221 |
High Voltage Ultra High Speed Switching Transistors |
Shindengen |
87 |
2SC3222 |
High Voltage Ultra High Speed Switching Transistors |
Shindengen |
88 |
2SC3223 |
High Voltage Ultra High Speed Switching Transistors |
Shindengen |
89 |
2SC3437 |
Transistor Silicon NPN Epitaxial Type (PCT process) Ultra High Speed Switching Applications Computer, Counter Applications |
TOSHIBA |
90 |
2SC3809 |
NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE |
NEC |
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