| No. |
Part Name |
Description |
Manufacturer |
| 61 |
1N5054 |
Rectifier Diode 1000V 1.5A Replacement 1N4007 |
Motorola |
| 62 |
1N5231BLCC3 |
5.1V, 0.02A Reference diode |
SemeLAB |
| 63 |
1N5400 |
3.0A Rectifier |
Comchip Technology |
| 64 |
1N5401 |
3.0A Rectifier |
Comchip Technology |
| 65 |
1N5402 |
3.0A Rectifier |
Comchip Technology |
| 66 |
1N5404 |
3.0A Rectifier |
Comchip Technology |
| 67 |
1N5406 |
3.0A Rectifier |
Comchip Technology |
| 68 |
1N5407 |
3.0A Rectifier |
Comchip Technology |
| 69 |
1N5408 |
3.0A Rectifier |
Comchip Technology |
| 70 |
1S310 |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 71 |
1S310H |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 72 |
1S311 |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 73 |
1S311H |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 74 |
1S312 |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 75 |
1S312H |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 76 |
1S313 |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 77 |
1S313H |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 78 |
1S314 |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 79 |
1S314H |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 80 |
1S315 |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 81 |
1S315H |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 82 |
20RIF100W |
V(rrm): 1000V; 20A RMS medium power fast turn-off thyristor. For inverters, switch mode power supplies and choppers |
International Rectifier |
| 83 |
20RIF120W |
V(rrm): 1200V; 20A RMS medium power fast turn-off thyristor. For inverters, switch mode power supplies and choppers |
International Rectifier |
| 84 |
24LC21A |
The 24LC21A is a 128 x 8-bit dual-mode Serial Electrically Erasable PROM designed to meet the plug-and-play requirements of today’s advanced monitors. The 24LC21A represents a simple, low-cost route to meeting the stringent standards |
Microchip |
| 85 |
250JB05L |
V(rrm): 50V; 25A rectifier bridge |
International Rectifier |
| 86 |
250JB10L |
V(rrm): 1000V; 25A rectifier bridge |
International Rectifier |
| 87 |
250JB12L |
V(rrm): 1200V; 25A rectifier bridge |
International Rectifier |
| 88 |
250JB1L |
V(rrm): 100V; 25A rectifier bridge |
International Rectifier |
| 89 |
250JB2L |
V(rrm): 200V; 25A rectifier bridge |
International Rectifier |
| 90 |
250JB4L |
V(rrm): 400V; 25A rectifier bridge |
International Rectifier |
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