| No. |
Part Name |
Description |
Manufacturer |
| 61 |
AT86RF211 |
ASSP for ISM - 400 to 950 MHz ISM Band, Up to 64K-bits/second Data Rate, FSK Modulation, Single Chip Transceiver for robust Wireless Low-cost Applications optimized for License Free in ISM bands. |
Atmel |
| 62 |
AT86ZL3201 |
The AT86ZL3201 Z-Link� Controller is an 8-bit AVR� Microcontroller customized for IEEE 802.15.4/ZigBee� for wireless monitor and control applications; supports the 868/915 MHz and 2.4 GHz bands with data rates of 20 kbps, 40 kbps, and 250 |
Atmel |
| 63 |
ATSAM2193 |
The ATSAM2193 provides a single-chip, low-cost MIDI sound system. Equipped with a serial and a parallel MIDI input, it provides state-of-the-art sound synthesis using a full GM sound set together with a range of compatible effects. Its low |
Atmel |
| 64 |
BCM8603 |
SAS/SATA RAID Controller |
Broadcom |
| 65 |
BD233 |
Trans GP BJT NPN 45V 2A Rail |
New Jersey Semiconductor |
| 66 |
CC2560-PAN1315 |
Bluetooth v2.1 + EDR (Enhanced Data Rate) Transceiver |
Texas Instruments |
| 67 |
DDR110-27T7RL |
DOUBLE DATA RATE TERMINATION NETWORK WITH DISABLE SWITCH |
SGS Thomson Microelectronics |
| 68 |
DDR110-27T7RL |
DOUBLE DATA RATE TERMINATION NETWORK WITH DISABLE SWITCH |
ST Microelectronics |
| 69 |
DDR110-56T7RL |
DOUBLE DATA RATE TERMINATION NETWORK WITH DISABLE SWITCH |
SGS Thomson Microelectronics |
| 70 |
DDR110-56T7RL |
DOUBLE DATA RATE TERMINATION NETWORK WITH DISABLE SWITCH |
ST Microelectronics |
| 71 |
DS28E80 |
Gamma Radiation Resistant 1-Wire Memory |
MAXIM - Dallas Semiconductor |
| 72 |
DS28E80P+TW |
Gamma Radiation Resistant 1-Wire Memory |
MAXIM - Dallas Semiconductor |
| 73 |
DS28E80P+W |
Gamma Radiation Resistant 1-Wire Memory |
MAXIM - Dallas Semiconductor |
| 74 |
DS28E80Q+T |
Gamma Radiation Resistant 1-Wire Memory |
MAXIM - Dallas Semiconductor |
| 75 |
DS28E80Q+TW |
Gamma Radiation Resistant 1-Wire Memory |
MAXIM - Dallas Semiconductor |
| 76 |
DS28E80Q+U |
Gamma Radiation Resistant 1-Wire Memory |
MAXIM - Dallas Semiconductor |
| 77 |
DS28E80Q+UW |
Gamma Radiation Resistant 1-Wire Memory |
MAXIM - Dallas Semiconductor |
| 78 |
DSP56F802TA80 |
16-bit digital signal processor, up to 40 MIPS operation at 80 MHz core frequency, 8K x 16-bit words program flash, 1K x 16-bit words program RAM, 2K x 16-bit words data flash, 1K x 16-bit words data RAM, 2K x 16-bit words boot flash |
Motorola |
| 79 |
DS_K4D263238D |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
| 80 |
EVAL-AD7400EB-U1 |
Isolated Sigma-Delta Modulator (10 MHz Data Rate) |
Analog Devices |
| 81 |
GS8170DD18C-250 |
250MHz 1M x 18 18MB double data rate sigmaRAM SRAM |
GSI Technology |
| 82 |
GS8170DD18C-250I |
250MHz 1M x 18 18MB double data rate sigmaRAM SRAM |
GSI Technology |
| 83 |
GS8170DD18C-300 |
300MHz 1M x 18 18MB double data rate sigmaRAM SRAM |
GSI Technology |
| 84 |
GS8170DD18C-300I |
300MHz 1M x 18 18MB double data rate sigmaRAM SRAM |
GSI Technology |
| 85 |
GS8170DD18C-333 |
333MHz 1M x 18 18MB double data rate sigmaRAM SRAM |
GSI Technology |
| 86 |
GS8170DD18C-333I |
333MHz 1M x 18 18MB double data rate sigmaRAM SRAM |
GSI Technology |
| 87 |
GS8170DD36C-250 |
250MHz 512K x 36 18MB double data rate sigmaRAM SRAM |
GSI Technology |
| 88 |
GS8170DD36C-250I |
250MHz 512K x 36 18MB double data rate sigmaRAM SRAM |
GSI Technology |
| 89 |
GS8170DD36C-300 |
300MHz 512K x 36 18MB double data rate sigmaRAM SRAM |
GSI Technology |
| 90 |
GS8170DD36C-300I |
300MHz 512K x 36 18MB double data rate sigmaRAM SRAM |
GSI Technology |
| | | |
