| No. |
Part Name |
Description |
Manufacturer |
| 61 |
IRHSNA57064 |
60V Hi-Rel Synchronous Rectifier N-Channel MOSFET in a SMD-2 package |
International Rectifier |
| 62 |
IRHSNA57064SCS |
60V Hi-Rel Synchronous Rectifier N-Channel MOSFET in a SMD-2 package |
International Rectifier |
| 63 |
IRHSNA57Z60 |
30V Hi-Rel Synchronous Rectifier N-Channel MOSFET in a SMD-2 package |
International Rectifier |
| 64 |
IRHSNA57Z60SCS |
30V Hi-Rel Synchronous Rectifier N-Channel MOSFET in a SMD-2 package |
International Rectifier |
| 65 |
KRA570E |
Built in Bias Resistor |
Korea Electronics (KEC) |
| 66 |
KRA570U |
Built in Bias Resistor |
Korea Electronics (KEC) |
| 67 |
KRA571E |
Built in Bias Resistor |
Korea Electronics (KEC) |
| 68 |
KRA571U |
Built in Bias Resistor |
Korea Electronics (KEC) |
| 69 |
KRA572E |
Built in Bias Resistor |
Korea Electronics (KEC) |
| 70 |
KRA572U |
Built in Bias Resistor |
Korea Electronics (KEC) |
| 71 |
LA5744 |
Separately-Excited Step-Down Switching Regulator (Variable Type) |
ON Semiconductor |
| 72 |
LA5744MP |
Separately-Excited Step-Down Switching Regulator (Variable type) |
ON Semiconductor |
| 73 |
LA5744TP |
Separately-Excited Step-Down Switching Regulator (Variable type) |
ON Semiconductor |
| 74 |
LA5756 |
Separately-Excited Step-Down Switching Regulator (Variable type) |
ON Semiconductor |
| 75 |
LA5757TP |
Separately-Excited Step-Down Switching Regulator (Variable type) |
ON Semiconductor |
| 76 |
LA5759 |
Separately-Excited Step-Down Switching Regulator (Variable type) |
ON Semiconductor |
| 77 |
LA5771MP |
Separately-Excited Step-Down Switching Regulator (3.3 V) |
ON Semiconductor |
| 78 |
LA5774 |
Separately-Excited Step-Down Switching Regulator (Variable Type) |
ON Semiconductor |
| 79 |
LA5774MP |
Separately-Excited Step-Down Switching Regulator (Variable type) |
ON Semiconductor |
| 80 |
LA5779 |
Separately-Excited Step-Down Switching Regulator (Variable type) |
ON Semiconductor |
| 81 |
LA5779MP |
Separately-Excited Step-Down Switching Regulator (Variable type) |
ON Semiconductor |
| 82 |
MA57 |
Small-signal device - Diodes - Band Switch Diodes |
Panasonic |
| 83 |
NX8563LA573-CC |
Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 240 km (4320 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1557.36 nm. Frequency 192.50 THz. SC-UPC. |
NEC |
| 84 |
NX8563LA573-CD |
Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 240 km (4320 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1557.36 nm. Frequency 192.50 THz. SC-APC. |
NEC |
| 85 |
NX8567SA573-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1557.363nm. Frequency 192.50 THz. FC-UPC connector. |
NEC |
| 86 |
NX8567SA573-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1557.363 nm. Frequency 192.50 THz. SC-UPC connector. |
NEC |
| 87 |
NX8567SA577-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1557.768nm. Frequency 192.45 THz. FC-UPC connector. |
NEC |
| 88 |
NX8567SA577-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1557.768 nm. Frequency 192.45 THz. SC-UPC connector. |
NEC |
| 89 |
SA57000-25D |
CapFREE 150 mA, low-noise, low dropout regulator with thermal protection |
Philips |
| 90 |
SA57000-28D |
CapFREE 150 mA, low-noise, low dropout regulator with thermal protection |
Philips |
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