No. |
Part Name |
Description |
Manufacturer |
1 |
1024-60LH/883 |
In-System Programmable High Density PLD |
Lattice Semiconductor |
2 |
1032-60LG/883 |
High-Density Programmable Logic |
Lattice Semiconductor |
3 |
150K/883C2 |
Diode Switching 800V 150A 2-Pin DO-8 |
New Jersey Semiconductor |
4 |
1N1883 |
Zener Diode 39V 1W |
Motorola |
5 |
1N2883 |
Signal Diode |
Motorola |
6 |
1N3883 |
High Power Fast Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
7 |
1N3883 |
400V Fast Recovery Diode in a DO-203AA (DO-4) package |
International Rectifier |
8 |
1N3883 |
Fast Rectifier (100-500ns) |
Microsemi |
9 |
1N3883 |
Fast recovery silicon rectifier diode |
Motorola |
10 |
1N3883 |
Rectifier Diode 6A |
Motorola |
11 |
1N3883 |
Diode Switching 400V 6A 2-Pin DO-4 |
New Jersey Semiconductor |
12 |
1N3883 |
6A Fast-Recovery Silicon Rectifier 400V |
RCA Solid State |
13 |
1N3883 |
Silicon rectifier diode - fast recovery series |
SESCOSEM |
14 |
1N3883 |
400 V, 6 A fast recovery rectifier |
Solid State Devices Inc |
15 |
1N3883 |
Diffused silicon junction rectifier designed for HF range 6A 400V |
Texas Instruments |
16 |
1N3883 |
Fast Recovery Rectifier |
Transitron Electronic |
17 |
1N3883A |
Diode Switching 400V 6A 2-Pin DO-4 |
New Jersey Semiconductor |
18 |
1N3883E3 |
Fast Rectifier (100-500ns) |
Microsemi |
19 |
1N3883R |
High Power Fast Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
20 |
1N3883R |
Fast Rectifier (100-500ns) |
Microsemi |
21 |
1N3883R |
6A Fast-Recovery Silicon Rectifier, reverse-polarity 400V |
RCA Solid State |
22 |
1N3883R |
Diffused silicon junction rectifier designed for HF range 6A 400V, reverse polarity |
Texas Instruments |
23 |
1N3883RE3 |
Fast Rectifier (100-500ns) |
Microsemi |
24 |
1N4883 |
3 WATT GLASS ZENER DIODES |
Microsemi |
25 |
1N4883 |
Zener Diode 12V 3W |
Motorola |
26 |
1N5883A |
500mW UNIBLOC silicon oxide-passivated zener regulator diode 75V |
Motorola |
27 |
1N883 |
Rectifier Diode 400V |
Motorola |
28 |
27C16Q883 |
16,384-Bit (2048 x 8) UV Erasable CMOS PROM Military Qualified |
National Semiconductor |
29 |
27C256E250_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 250ns |
National Semiconductor |
30 |
27C256E300_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 300ns |
National Semiconductor |
| | | |