| No. |
Part Name |
Description |
Manufacturer |
| 61 |
3DSD1280-323H |
1.28 GBit Synchronous DRAM - Hermetic package |
3D PLUS |
| 62 |
3DSD1280-883D-S |
1.28 GBit Synchronous DRAM - Hermetic package |
3D PLUS |
| 63 |
3DSD1280-PROTO |
1.28 GBit Synchronous DRAM - Hermetic package |
3D PLUS |
| 64 |
3SK30 |
Silicon N-Channel MOS FET, intended for use in FM/AM RF AMP. and Mixer |
Hitachi Semiconductor |
| 65 |
3SK30A |
Silicon N-Channel MOS FET, intended for use in FM/AM RF AMP. and Mixer |
Hitachi Semiconductor |
| 66 |
40290 |
40-Watt Peak-Envelope-Power Trasistor Amplifier for AM Transmitters in the Aircraft Band (118 to 136 MHz) - Application Note |
RCA Solid State |
| 67 |
40291 |
40-Watt Peak-Envelope-Power Trasistor Amplifier for AM Transmitters in the Aircraft Band (118 to 136 MHz) - Application Note |
RCA Solid State |
| 68 |
40292 |
40-Watt Peak-Envelope-Power Trasistor Amplifier for AM Transmitters in the Aircraft Band (118 to 136 MHz) - Application Note |
RCA Solid State |
| 69 |
41C16257 |
256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
Integrated Silicon Solution Inc |
| 70 |
4CX1500B |
RADIAL BEAM POWER TETRODE |
Eimac |
| 71 |
4X150A |
RADIAL BEAM POWER TETRODE |
Eimac |
| 72 |
4X150D |
RADIAL BEAM POWER TETRODE |
Eimac |
| 73 |
54F410 |
Register Stack 16 x 4 RAM TRI-STATE Output Register |
National Semiconductor |
| 74 |
54F410DM |
Register Stack��16 x 4 RAM TRI-STATEE Output Register |
National Semiconductor |
| 75 |
54F410DMQB |
Register Stack 16 x 4 RAM TRI-STATE Output Register [Life-time buy] |
National Semiconductor |
| 76 |
54F410DMQB |
Register Stack 16 x 4 RAM TRI-STATE Output Register [Life-time buy] |
National Semiconductor |
| 77 |
54F410LM |
Register Stack��16 x 4 RAM TRI-STATEE Output Register |
National Semiconductor |
| 78 |
5962-0151101QXC |
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose none |
Aeroflex Circuit Technology |
| 79 |
5962-0151101TXC |
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose none |
Aeroflex Circuit Technology |
| 80 |
5962-0153301QXC |
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose none. |
Aeroflex Circuit Technology |
| 81 |
5962-0153301TXC |
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose none |
Aeroflex Circuit Technology |
| 82 |
5962-1123701VXC |
16MB Radiation-Hardened SRAM 76-CFP -55 to 125 |
Texas Instruments |
| 83 |
5962-9232404MXA |
CMOS nvSRAM high performance 8K x 8 nonvolatile static RAM |
SIMTEK |
| 84 |
5962-9232404MXC |
CMOS nvSRAM high performance 8K x 8 nonvolatile static RAM |
SIMTEK |
| 85 |
5962-9232404MYA |
CMOS nvSRAM high performance 8K x 8 nonvolatile static RAM |
SIMTEK |
| 86 |
5962-9232404MYC |
CMOS nvSRAM high performance 8K x 8 nonvolatile static RAM |
SIMTEK |
| 87 |
5962-9232405MXA |
CMOS nvSRAM high performance 8K x 8 nonvolatile static RAM |
SIMTEK |
| 88 |
5962-9232405MXC |
CMOS nvSRAM high performance 8K x 8 nonvolatile static RAM |
SIMTEK |
| 89 |
5962-9232405MYA |
CMOS nvSRAM high performance 8K x 8 nonvolatile static RAM |
SIMTEK |
| 90 |
5962-9232405MYC |
CMOS nvSRAM high performance 8K x 8 nonvolatile static RAM |
SIMTEK |
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