No. |
Part Name |
Description |
Manufacturer |
61 |
GC4945-12 |
Mesa Beam Lead PIN |
Microsemi |
62 |
GC4946-12 |
Mesa Beam Lead PIN |
Microsemi |
63 |
HL6335G |
(HL6336G) Circular Beam Low Operating Current |
Hitachi Semiconductor |
64 |
HL6336G |
Circular Beam Low Operating Current |
Hitachi Semiconductor |
65 |
HSCH5531 |
BEAM LEAD SCHOTTKY DIODE |
Advanced Semiconductor |
66 |
HYB314100BJ-50 |
4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
Siemens |
67 |
HYB314100BJ-60 |
4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
Siemens |
68 |
HYB314100BJ-70 |
4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
Siemens |
69 |
HYB314100BJBJL-50 |
4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
Siemens |
70 |
HYB314100BJBJL-50 |
-4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
Siemens |
71 |
HYB314100BJBJL-50 |
-4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
Siemens |
72 |
HYB314100BJL-50 |
4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
Siemens |
73 |
HYB314100BJL-60 |
4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
Siemens |
74 |
HYB314100BJL-70 |
4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
Siemens |
75 |
HYB314175BJ-50 |
-3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
76 |
HYB314175BJ-50 |
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
77 |
HYB314175BJ-50 |
-3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
78 |
HYB314175BJ-50 |
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
79 |
HYB314175BJ-55 |
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
80 |
HYB314175BJ-60 |
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
81 |
HYB314175BJL-50 |
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
82 |
HYB314175BJL-55 |
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
83 |
HYB314175BJL-60 |
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
84 |
HYB3165165ATL-50 |
4M x 16 Bit 4k EDO DRAM Low Power |
Infineon |
85 |
HYB3165165ATL-60 |
4M x 16 Bit 4k EDO DRAM Low Power |
Infineon |
86 |
HYB3165165BTL-50 |
4M x 16 Bit 4k EDO DRAM Low Power |
Infineon |
87 |
HYB3165165BTL-60 |
4M x 16 Bit 4k EDO DRAM Low Power |
Infineon |
88 |
HYB3165805ATL-50 |
4M x 16 Bit 4k EDO DRAM Low Power |
Infineon |
89 |
HYB3165805ATL-60 |
4M x 16 Bit 4k EDO DRAM Low Power |
Infineon |
90 |
HYB511000BJ |
-1 M x 1-Bit Dynamic RAM Low Power 1 M �� 1-Bit Dynamic RAM |
Siemens |
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