| No. |
Part Name |
Description |
Manufacturer |
| 61 |
2N5088 |
Amplifier transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 35V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 62 |
2N5088-D |
Amplifier Transistors NPN Silicon |
ON Semiconductor |
| 63 |
2N5088RLRE |
Amplifier Transistor NPN |
ON Semiconductor |
| 64 |
2N5089 |
Amplifier transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 65 |
2N5208 |
PNP silicon annular amplifier transistor designed for general-purpose RF amplifier applications up to 300 MHz |
Motorola |
| 66 |
2N5209 |
Low-Level, Low-Noise NPN Silicon amplifier transistor |
ITT Semiconductors |
| 67 |
2N5209 |
Amplifier Transistors(NPN Silicon) |
ON Semiconductor |
| 68 |
2N5209-D |
Amplifier Transistors NPN Silicon |
ON Semiconductor |
| 69 |
2N5209RLRE |
Amplifier Transistor NPN |
ON Semiconductor |
| 70 |
2N5210 |
Low-Level, Low-Noise NPN Silicon amplifier transistor |
ITT Semiconductors |
| 71 |
2N5210 |
Amplifier Transistors(NPN Silicon) |
ON Semiconductor |
| 72 |
2N5210 |
Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 50V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 73 |
2N5210RLRA |
Amplifier Transistor NPN |
ON Semiconductor |
| 74 |
2N5220 |
Low-Power general purpose NPN silicon amplifier transistor |
ITT Semiconductors |
| 75 |
2N5221 |
Low-Power General purpose PNP silicon amplifier transistor |
ITT Semiconductors |
| 76 |
2N5223 |
Low-Level General purpose NPN silicon amplifier transistor |
ITT Semiconductors |
| 77 |
2N5225 |
Medium power NPN silicon amplifier transistor |
ITT Semiconductors |
| 78 |
2N5226 |
Medium Power PNP Silicon Amplifier transistor |
ITT Semiconductors |
| 79 |
2N5227 |
General purpose PNP Silicon Low-Level amplifier transistor |
ITT Semiconductors |
| 80 |
2N5400 |
AMPLIFIER TRANSISTOR PNP SILICON |
Boca Semiconductor Corporation |
| 81 |
2N5400 |
PNP silicon annular high voltge amplifier transistor |
Motorola |
| 82 |
2N5400 |
Amplifier Transistor(PNP Silicon) |
ON Semiconductor |
| 83 |
2N5400 |
Amplifier transistor. Collector-emitter voltage: Vceo = -120V. Collector-base voltage: Vcbo = -130V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 84 |
2N5400RLRA |
Amplifier Transistor PNP |
ON Semiconductor |
| 85 |
2N5400RLRP |
Amplifier Transistor PNP |
ON Semiconductor |
| 86 |
2N5401 |
AMPLIFIER TRANSISTOR PNP SILICON |
Boca Semiconductor Corporation |
| 87 |
2N5401 |
PNP silicon annular high voltge amplifier transistor |
Motorola |
| 88 |
2N5401 |
Amplifier transistor. Collector-emitter voltage: Vceo = -150V. Collector-base voltage: Vcbo = -160V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 89 |
2N5401-D |
Amplifier Transistors PNP Silicon |
ON Semiconductor |
| 90 |
2N5401G |
Amplifier Transistor(PNP Silicon) |
Motorola |
| | | |
