No. |
Part Name |
Description |
Manufacturer |
61 |
GS820H32AQ-138 |
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM |
GSI Technology |
62 |
GS820H32AQ-138I |
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM |
GSI Technology |
63 |
GS820H32AQ-150 |
150MHz 9ns 64K x 32 2M synchronous burst SRAM |
GSI Technology |
64 |
GS820H32AQ-150I |
150MHz 9ns 64K x 32 2M synchronous burst SRAM |
GSI Technology |
65 |
GS820H32AQ-4 |
117MHz 11ns 64K x 32 2M synchronous burst SRAM |
GSI Technology |
66 |
GS820H32AQ-4I |
117MHz 11ns 64K x 32 2M synchronous burst SRAM |
GSI Technology |
67 |
GS820H32AQ-5 |
100MHz 12ns 64K x 32 2M synchronous burst SRAM |
GSI Technology |
68 |
GS820H32AQ-5I |
100MHz 12ns 64K x 32 2M synchronous burst SRAM |
GSI Technology |
69 |
GS820H32AQ-6 |
66MHz 18ns 64K x 32 2M synchronous burst SRAM |
GSI Technology |
70 |
GS820H32AQ-6I |
66MHz 18ns 64K x 32 2M synchronous burst SRAM |
GSI Technology |
71 |
HY5DU643222AQ-4 |
GDDR SDRAM - 64Mb |
Hynix Semiconductor |
72 |
HY5DU643222AQ-43 |
GDDR SDRAM - 64Mb |
Hynix Semiconductor |
73 |
HY5DU643222AQ-5 |
GDDR SDRAM - 64Mb |
Hynix Semiconductor |
74 |
HY5DU643222AQ-7 |
GDDR SDRAM - 64Mb |
Hynix Semiconductor |
75 |
KM4132G271AQ-10 |
128K x 32Bit x 2 Banks Synchronous Graphic RAM |
Samsung Electronic |
76 |
KM4132G271AQ-12 |
128K x 32bit x 2 banks synchronous graphic RAM, 3.3V, 12ns |
Samsung Electronic |
77 |
KM4132G271AQ-8 |
128K x 32bit x 2 banks synchronous graphic RAM, 3.3V, 8ns |
Samsung Electronic |
78 |
LM2590HV-AQ-Q1 |
SIMPLE SWITCHER Power Converter 150 KHz 1A Step-Down Voltage Regulator with Features |
Texas Instruments |
79 |
MACH210AQ-12 |
High-Density EE CMOS Programmable Logic |
Advanced Micro Devices |
80 |
MACH210AQ-12JC |
High-density EE CMOS programmable logic, 12ns, input pull-up resistors, quarter power |
Advanced Micro Devices |
81 |
MACH210AQ-12JC |
High-Density EE CMOS Programmable Logic |
Lattice Semiconductor |
82 |
MACH210AQ-15 |
High-Density EE CMOS Programmable Logic |
Advanced Micro Devices |
83 |
MACH210AQ-15JC |
High-density EE CMOS programmable logic, 15ns, input pull-up resistors, quarter power |
Advanced Micro Devices |
84 |
MACH210AQ-15JC |
High-Density EE CMOS Programmable Logic |
Lattice Semiconductor |
85 |
MACH210AQ-20 |
High-Density EE CMOS Programmable Logic |
Advanced Micro Devices |
86 |
MACH210AQ-20JC |
High-density EE CMOS programmable logic, 20ns, input pull-up resistors, quarter power |
Advanced Micro Devices |
87 |
MACH210AQ-20JC |
High-Density EE CMOS Programmable Logic |
Lattice Semiconductor |
88 |
MMBT2222AQ-7-F |
Bipolar Transistors |
Diodes |
89 |
MMBT2907AQ-7-F |
Bipolar Transistors |
Diodes |
90 |
MPC604E1PNS |
MPC604E1PNS PowerPC 604e RISC Microprocessor Family: PIDAq-604e and PID9q-604e Part Number Specs. |
Motorola |
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