No. |
Part Name |
Description |
Manufacturer |
61 |
BCR8PM-14 |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
62 |
BCR8PM-18 |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
63 |
BCR8PM-20 |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
64 |
CL304L |
High-output GaAlAs IRED mounted in a low profile clear package. |
Kondenshi Corp |
65 |
CR02 |
LOW POWER USE PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
66 |
CR02AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
67 |
CR05AS |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
68 |
GES2221 |
Planar passivated epitaxial NPN silicon transistor. 30V, 400mA. |
General Electric Solid State |
69 |
GES2221A |
Planar passivated epitaxial NPN silicon transistor. 40V, 400mA. |
General Electric Solid State |
70 |
GES2222 |
Planar passivated epitaxial NPN silicon transistor. 30V, 400mA. |
General Electric Solid State |
71 |
GES2222A |
Planar passivated epitaxial NPN silicon transistor. 40V, 400mA. |
General Electric Solid State |
72 |
GES2906 |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
73 |
GES2906A |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
74 |
GES2907 |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
75 |
GES2907A |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
76 |
GES5810 |
Planar passivated epitaxial NPN silicon transistor. 25V, 750mA. |
General Electric Solid State |
77 |
GES5811 |
Planar passivated epitaxial PNP silicon transistor. -25V, -750mA. |
General Electric Solid State |
78 |
GES5812 |
Planar passivated epitaxial NPN silicon transistor. 25V, 750mA. |
General Electric Solid State |
79 |
GES5813 |
Planar passivated epitaxial PNP silicon transistor. -25V, -750mA. |
General Electric Solid State |
80 |
GES5814 |
Planar passivated epitaxial NPN silicon transistor. 40V, 750mA. |
General Electric Solid State |
81 |
GES5815 |
Planar passivated epitaxial PNP silicon transistor. -40V, -750mA. |
General Electric Solid State |
82 |
GES5816 |
Planar passivated epitaxial NPN silicon transistor. 40V, 750mA. |
General Electric Solid State |
83 |
GES5817 |
Planar passivated epitaxial PNP silicon transistor. -40V, -750mA. |
General Electric Solid State |
84 |
GES5818 |
Planar passivated epitaxial NPN silicon transistor. 40V, 750mA. |
General Electric Solid State |
85 |
GES5819 |
Planar passivated epitaxial PNP silicon transistor. -40V, -750mA. |
General Electric Solid State |
86 |
HP333 |
Double-end type high-sensitivity photo diode mounted in a compact clear package |
Kodenshi Corp |
87 |
LINEAR PATTERNS |
General Purpose Strain Gages - Linear Patterns |
Vishay |
88 |
LINEAR PATTERNS |
General Purpose Strain Gages - Linear Patterns |
Vishay |
89 |
LINEAR PATTERNS - DUAL GRID |
Transducer-Class® Strain Gages |
Vishay |
90 |
LINEAR PATTERNS - SINGLE GRID |
Transducer-Class® Strain Gages |
Vishay |
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