| No. |
Part Name |
Description |
Manufacturer |
| 61 |
MAX72024C# |
Generation II Enhanced 6.0Gbps 24-PHY SAS Expander |
MAXIM - Dallas Semiconductor |
| 62 |
MAX72024C#W |
Generation II Enhanced 6.0Gbps 24-PHY SAS Expander |
MAXIM - Dallas Semiconductor |
| 63 |
MAX72024C+ |
Generation II Enhanced 6.0Gbps 24-PHY SAS Expander |
MAXIM - Dallas Semiconductor |
| 64 |
MAX72038B |
Generation II Enhanced 6.0Gbps 38-PHY SAS Expander |
MAXIM - Dallas Semiconductor |
| 65 |
MAX72038B# |
Generation II Enhanced 6.0Gbps 38-PHY SAS Expander |
MAXIM - Dallas Semiconductor |
| 66 |
MAX72038B+ |
Generation II Enhanced 6.0Gbps 38-PHY SAS Expander |
MAXIM - Dallas Semiconductor |
| 67 |
MAX72044B |
Generation II Enhanced 6.0Gbps 44-PHY SAS Expander |
MAXIM - Dallas Semiconductor |
| 68 |
MAX72044B# |
Generation II Enhanced 6.0Gbps 44-PHY SAS Expander |
MAXIM - Dallas Semiconductor |
| 69 |
MAX72044B+ |
Generation II Enhanced 6.0Gbps 44-PHY SAS Expander |
MAXIM - Dallas Semiconductor |
| 70 |
MCP2120 |
The MCP2120 is a low-cost, high-performance, fully-static infrared encoder/decoder. This device sits between a UART and an infrared (IR) optical transceiver The data received from a standard UART is encoded (modulated), and output as elect |
Microchip |
| 71 |
MGA-665P8-BLK |
GaAs Enhancement-Mode PHEMT 0.5 ? 6 GHz Low Noise Amplifier |
Agilent (Hewlett-Packard) |
| 72 |
MGA-665P8-TR1 |
GaAs Enhancement-Mode PHEMT 0.5 ? 6 GHz Low Noise Amplifier |
Agilent (Hewlett-Packard) |
| 73 |
MGA-665P8-TR2 |
GaAs Enhancement-Mode PHEMT 0.5 ? 6 GHz Low Noise Amplifier |
Agilent (Hewlett-Packard) |
| 74 |
ND5051-3G |
4 V, GaAs epitaxial schottky barrier diode |
NEC |
| 75 |
ND5052-3G |
6.5 V, GaAs epitaxial schottky barrier diode |
NEC |
| 76 |
ND5111-3G |
4 V, GaAs epitaxial schottky barrier diode |
NEC |
| 77 |
ND5112-3G |
4 V, GaAs epitaxial schottky barrier diode |
NEC |
| 78 |
ND5112-5F |
4 V, GaAs epitaxial schottky barrier diode |
NEC |
| 79 |
ND5113-3G |
4 V, GaAs epitaxial schottky barrier diode |
NEC |
| 80 |
ND5113-5F |
4 V, GaAs epitaxial schottky barrier diode |
NEC |
| 81 |
ND5114-3G |
4 V, GaAs epitaxial schottky barrier diode |
NEC |
| 82 |
ND5114-5F |
4 V, GaAs epitaxial schottky barrier diode |
NEC |
| 83 |
ND587R-3R |
GaAs Epitaxial schottky barrier diode QUAD |
NEC |
| 84 |
ND587T-3R |
GaAs Epitaxial Schottky barrier diode PAIR |
NEC |
| 85 |
RFAM3790 |
45 - 1218 MHz GaAs Edge QAM Integrated Amplifier |
Qorvo |
| 86 |
S3006C |
GaAs epitaxial schottky barrier diode |
TOSHIBA |
| 87 |
S3006D |
GaAs epitaxial schottky barrier diode |
TOSHIBA |
| 88 |
S3006E |
GaAs epitaxial schottky barrier diode |
TOSHIBA |
| 89 |
S3020 |
GaAs epitaxial MESA GUNN diode |
TOSHIBA |
| 90 |
S3020A |
GaAs epitaxial MESA GUNN diode |
TOSHIBA |
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