| No. |
Part Name |
Description |
Manufacturer |
| 61 |
BB502M |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 62 |
BB502M |
Transistors>Amplifiers/MOSFETs |
Renesas |
| 63 |
BB503 |
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier |
Hitachi Semiconductor |
| 64 |
BB503C |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
Hitachi Semiconductor |
| 65 |
BB503C |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 66 |
BB503C |
Transistors>Amplifiers/MOSFETs |
Renesas |
| 67 |
BB503M |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 68 |
BB503M |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
Hitachi Semiconductor |
| 69 |
BB503M |
Transistors>Amplifiers/MOSFETs |
Renesas |
| 70 |
BB504C |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 71 |
BB504C |
Transistors>Amplifiers/MOSFETs |
Renesas |
| 72 |
BB504M |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 73 |
BB504M |
Transistors>Amplifiers/MOSFETs |
Renesas |
| 74 |
BB505C |
Transistors>Amplifiers/MOSFETs |
Renesas |
| 75 |
BB505M |
Transistors>Amplifiers/MOSFETs |
Renesas |
| 76 |
BD1LB500EFJ-C |
In-Vehicle 1ch Low Side Switch |
ROHM |
| 77 |
BD1LB500EFJ-CE2 |
In-Vehicle 1ch Low Side Switch |
ROHM |
| 78 |
BD1LB500FVM-C |
In-Vehicle 1ch Low Side Switch |
ROHM |
| 79 |
BD1LB500FVM-CGTR |
In-Vehicle 1ch Low Side Switch |
ROHM |
| 80 |
C180B500 |
Phase Control SCR 190 Amperes Average 600 Volts |
Powerex Power Semiconductors |
| 81 |
CSB507 |
30.000W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 40 - 320 hFE. |
Continental Device India Limited |
| 82 |
CSB507C |
30.000W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 40 - 80 hFE. |
Continental Device India Limited |
| 83 |
CSB507D |
30.000W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE. |
Continental Device India Limited |
| 84 |
CSB507E |
30.000W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE. |
Continental Device India Limited |
| 85 |
CSB507F |
30.000W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 160 - 320 hFE. |
Continental Device India Limited |
| 86 |
DS1040-B50 |
Programmable One-Shot Pulse Generator |
MAXIM - Dallas Semiconductor |
| 87 |
DS1040M-B50 |
Programmable One-Shot Pulse Generator |
Dallas Semiconductor |
| 88 |
DS1040Z-B50 |
Programmable One-Shot Pulse Generator |
Dallas Semiconductor |
| 89 |
DS1040Z-B50 |
Programmable One-Shot Pulse Generator |
MAXIM - Dallas Semiconductor |
| 90 |
DS1040Z-B50+ |
Programmable One-Shot Pulse Generator |
MAXIM - Dallas Semiconductor |
| | | |
