No. |
Part Name |
Description |
Manufacturer |
61 |
MSB58TA-3 |
ULTRA BRIGHT RED LED LAMP |
Micro Electronics |
62 |
MSB58TA-3B |
ULTRA HIGH BRIGHTNESS RED LED LAMP |
Micro Electronics |
63 |
MSB58TA-4B |
ULTRA HIGH BRIGHTNESS RED LED LAMP |
Micro Electronics |
64 |
MSB58TA-5B |
ULTRA HIGH BRIGHTNESS RED LED LAMP |
Micro Electronics |
65 |
MSB58TA-B |
ULTRA BRIGHT RED LED LAMP |
Micro Electronics |
66 |
MSB58TA-B |
ULTRA BRIGHT RED LED LAMP |
Micro Electronics |
67 |
NSB5881 |
Multidigit LED numeric series |
National Semiconductor |
68 |
NSB5882 |
Multidigit LED numeric series |
National Semiconductor |
69 |
NTB5860N |
60 V, 3 mOhm, 220 A, N-Channel, D2PAK Power MOSFET |
ON Semiconductor |
70 |
NTB5860NL |
60 V, 3 mOhm, 220 A, N-Channel, Logic Level, D2PAK Power MOSFET |
ON Semiconductor |
71 |
NX8562LB581-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1558.17 nm. Frequency 192.40 THz. Anode ground. FC-PC connector. |
NEC |
72 |
NX8562LB589-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. Anode ground. FC-PC connector. |
NEC |
73 |
NX8563LB581 |
CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS |
NEC |
74 |
NX8563LB581-BA |
CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS |
NEC |
75 |
NX8563LB581-CA |
CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS |
NEC |
76 |
NX8563LB589 |
CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS |
NEC |
77 |
NX8563LB589-BA |
CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS |
NEC |
78 |
NX8563LB589-CA |
CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS |
NEC |
79 |
OM5730 |
STB5860 Set-Top Box STB concept |
Philips |
80 |
PB58 |
POWER BOOSTER AMPLIFIERS |
Apex Microtechnology Corporation |
81 |
PB58A |
POWER BOOSTER AMPLIFIERS |
Apex Microtechnology Corporation |
82 |
PMDPB58UPE |
20 V dual P-channel Trench MOSFET |
Nexperia |
83 |
PMDPB58UPE |
20 V dual P-channel Trench MOSFET |
NXP Semiconductors |
84 |
Q62702-B580 |
Silicon Variable Capacitance Diode (For UHF and TV/TR tuners Large capacitance ratio, low series resistance) |
Siemens |
85 |
Q62702-B583 |
Silicon Tuning Diode (For tuning UHF and VHF TV Tuners Large capacitance ratio, low series resistance) |
Siemens |
86 |
Q62702-B586 |
Silicon Variable Capacitance Diode (For tuning of extended frequency bands in VHF TV/VTR tuners) |
Siemens |
87 |
Q62702-B589 |
Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners, Bd I) |
Siemens |
88 |
SAA7215HS/C2 |
STB5860 Set-Top Box STB concept |
Philips |
89 |
SAA7216HS/C1 |
STB5860 Set-Top Box STB concept |
Philips |
90 |
SAA7221HS/C1 |
STB5860 Set-Top Box STB concept |
Philips |
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