| No. |
Part Name |
Description |
Manufacturer |
| 61 |
ERA8APB7681V |
High Precision Thin Film Chip Resistors, High Reliability Type |
Panasonic |
| 62 |
ERA8APB7682V |
High Precision Thin Film Chip Resistors, High Reliability Type |
Panasonic |
| 63 |
ERA8ARB7681V |
High Precision Thin Film Chip Resistors, High Reliability Type |
Panasonic |
| 64 |
ERA8ARB7682V |
High Precision Thin Film Chip Resistors, High Reliability Type |
Panasonic |
| 65 |
ERJPB3B7680V |
High Precision Thick Film Chip Resistors |
Panasonic |
| 66 |
ERJPB3B7681V |
High Precision Thick Film Chip Resistors |
Panasonic |
| 67 |
ERJPB3B7682V |
High Precision Thick Film Chip Resistors |
Panasonic |
| 68 |
ERJPB6B7680V |
High Precision Thick Film Chip Resistors |
Panasonic |
| 69 |
ERJPB6B7681V |
High Precision Thick Film Chip Resistors |
Panasonic |
| 70 |
ERJPB6B7682V |
High Precision Thick Film Chip Resistors |
Panasonic |
| 71 |
ERJPB6B7683V |
High Precision Thick Film Chip Resistors |
Panasonic |
| 72 |
HDSP-B76Z |
HDSP-B76Z · 31.99 mm (1.26 inch) General Purpose 5x7 Dot Matrix Alphanumeric Displays |
Agilent (Hewlett-Packard) |
| 73 |
HDSP-B76Z |
HDSP-B76Z · 31.99 mm (1.26 inch) General Purpose 5x7 Dot Matrix Alphanumeric Displays |
Agilent (Hewlett-Packard) |
| 74 |
HSB764 |
PNP EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
| 75 |
ICE 2B765 I |
Second Generation Integrated Power ICs with Enhanced Protection Features and Low Standby |
Infineon |
| 76 |
ICE 2B765 P2 |
Second Generation Integrated Power ICs with Enhanced Protection Features and Low Standby |
Infineon |
| 77 |
ICE2B765I |
Integrated Power ICs - max. Pout=130W, fop=67kHz, Vbreak=650V, TO220 |
Infineon |
| 78 |
ICE2B765P |
Integrated Power ICs - max. Pout=130W, fop=67kHz, Vbreak=650V, TO220 |
Infineon |
| 79 |
ICE2B765P2 |
Integrated Power ICs - max. Pout=130W, fop=67kHz, Vbreak=650V, TO220 |
Infineon |
| 80 |
KTB764 |
General Purpose Transistor |
Korea Electronics (KEC) |
| 81 |
MBRB760 |
SCHOTTKY RECTIFIER |
General Semiconductor |
| 82 |
MBRB760 |
Schottky Barrier Rectifier, Forward Current 7.5A |
Vishay |
| 83 |
NX8562LB761-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1576.19 nm. Frequency 190.20 THz. Anode ground. FC-PC connector. |
NEC |
| 84 |
NX8563LB761-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1576.19 nm. Frequency 190.20 THz. FC-PC connector. Anode ground. |
NEC |
| 85 |
OPB760 |
Reflective Object Sensor |
Optek Technology |
| 86 |
OPB760 |
Photologic Reflective Object Sensors |
Optek Technology |
| 87 |
OPB760N |
Photologic Reflective Object Sensors |
Optek Technology |
| 88 |
OPB760T |
Photologic Reflective Object Sensors |
Optek Technology |
| 89 |
OPB760T |
Photologic Reflective Object Sensors |
Optek Technology |
| 90 |
OPB761N |
Photologic Reflective Object Sensors |
Optek Technology |
| | | |
