| No. |
Part Name |
Description |
Manufacturer |
| 61 |
BB835 |
Silicon Tuning Diode (Extended frequency range up to 2.8 Ghz ; special design for use in TV-sat indoor units) |
Siemens |
| 62 |
BB837 |
Varactordiodes - Silicon tuning diode with extended frequency range up to 2.8GHz |
Infineon |
| 63 |
BB837 |
Silicon Tuning Diode (Extented frequency range up to 2.8 GHz special design for use in TV-sat indoor units) |
Siemens |
| 64 |
CSB834 |
30.000W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 200 hFE. Complementary CSD880 |
Continental Device India Limited |
| 65 |
CSB834O |
30.000W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD880O |
Continental Device India Limited |
| 66 |
CSB834Y |
30.000W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD880Y |
Continental Device India Limited |
| 67 |
CSD880 |
30.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 300 hFE. Complementary CSB834 |
Continental Device India Limited |
| 68 |
CSD880GR |
30.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 150 - 300 hFE. Complementary CSB834GR |
Continental Device India Limited |
| 69 |
CSD880O |
30.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB834O |
Continental Device India Limited |
| 70 |
CSD880Y |
30.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB834Y |
Continental Device India Limited |
| 71 |
ERB83-004 |
Schottky barrier diode |
COLLMER SEMICONDUCTOR INC |
| 72 |
ERB83-004 |
SCHOTTKY BARRIER DIODE |
Fuji Electric |
| 73 |
ERB83-006 |
SCHOTTKY BARRIER DIODE |
Fuji Electric |
| 74 |
HSB83 |
Small Signal Diode |
Hitachi Semiconductor |
| 75 |
HSB83 |
Diodes>Switching |
Renesas |
| 76 |
HSB83YP |
Small Signal Diode |
Hitachi Semiconductor |
| 77 |
HSB83YP |
Diodes>Switching |
Renesas |
| 78 |
IRLB8314 |
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 79 |
IRLB8314PBF |
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 80 |
ISL21007BFB830 |
Precision, Low Noise FGA� Voltage References |
Intersil |
| 81 |
ISL21007CFB830 |
Precision, Low Noise FGA� Voltage References |
Intersil |
| 82 |
ISL21007DFB830 |
Precision, Low Noise FGA� Voltage References |
Intersil |
| 83 |
KSB834 |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 84 |
KSB834 |
PNP (LOW FREQUENCY POWER AMPLIFIER) |
Samsung Electronic |
| 85 |
KSB834O |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 86 |
KSB834W |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 87 |
KSB834WYTM |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 88 |
KSB834Y |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 89 |
KSB834YTU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 90 |
MBRB830 |
8.0A, 30V ultra fast recovery rectifier |
MCC |
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