No. |
Part Name |
Description |
Manufacturer |
61 |
BD648 |
PNP SILICON POWER DARLINGTONS |
Power Innovations |
62 |
BD648 |
Silicon PNP Power Transistors TO-220C package |
Savantic |
63 |
BD648 |
Darlington Transistor PNP |
Siemens |
64 |
BD648 |
PNP Silicon Epibase power Darlington Transistor (62.5 Watt) |
Siemens |
65 |
BD648 |
PNP SILICON DARLINGTON TRANSISTORS |
Siemens |
66 |
BD648 |
NPN SILICON DARLINGTON TRANSISTORS |
Siemens |
67 |
BD648 |
100 V, PNP silicon power darlington |
TRANSYS Electronics Limited |
68 |
BD648 |
PNP SILICON POWER DARLINGTONS |
TRSYS |
69 |
BD648 |
Tranzystor ma�ej cz�stotliwo�ci du�ej mocy |
Ultra CEMI |
70 |
BD648AS |
Trans Darlington PNP 80V 8A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
71 |
BD649 |
8 A N-P-N darlington power transistor. 100 V. 70 W. Gain of 750 at 3 A. |
General Electric Solid State |
72 |
BD649 |
Silicon NPN Darlington EPIBASE Power Transistor |
IPRS Baneasa |
73 |
BD649 |
Trans Darlington NPN 100V 8A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
74 |
BD649 |
NPN SILICON POWER DARLINGTONS |
Power Innovations |
75 |
BD649 |
Silicon NPN Power Transistors TO-220C package |
Savantic |
76 |
BD649 |
Darlington Transistor NPN |
Siemens |
77 |
BD649 |
NPN Silicon Epibase power Darlington Transistor |
Siemens |
78 |
BD649 |
PNP SILICON DARLINGTON TRANSISTORS |
Siemens |
79 |
BD649 |
NPN SILICON DARLINGTON TRANSISTORS |
Siemens |
80 |
BD649 |
Tranzystor ma�ej cz�stotliwo�ci du�ej mocy |
Ultra CEMI |
81 |
CDBD640-G |
Schottky Barrier Rectifiers Diodes, VRRM=40V, VR=40V, IO=6A |
Comchip Technology |
82 |
ERJ3RBD6490V |
General Purpose Precision Thick Chip Resistors |
Panasonic |
83 |
ERJ3RBD6491V |
General Purpose Precision Thick Chip Resistors |
Panasonic |
84 |
ERJ3RBD6492V |
General Purpose Precision Thick Chip Resistors |
Panasonic |
85 |
ERJ6RBD6490V |
General Purpose Precision Thick Chip Resistors |
Panasonic |
86 |
ERJ6RBD6491V |
General Purpose Precision Thick Chip Resistors |
Panasonic |
87 |
ERJ6RBD6492V |
General Purpose Precision Thick Chip Resistors |
Panasonic |
88 |
LPC11E14FBD64 |
24kB flash, 8kB SRAM, LQFP64 package |
NXP Semiconductors |
89 |
LPC11E36FBD64 |
32-bit ARM Cortex-M0 microcontroller; up to 128 kB flash; up to 12 kB SRAM and 4 kB EEPROM; USART |
NXP Semiconductors |
90 |
LPC11E37FBD64 |
32-bit ARM Cortex-M0 microcontroller; up to 128 kB flash; up to 12 kB SRAM and 4 kB EEPROM; USART |
NXP Semiconductors |
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