No. |
Part Name |
Description |
Manufacturer |
61 |
BF506 |
Trans GP BJT NPN 35V 30A |
New Jersey Semiconductor |
62 |
BF506 |
Epitaxial planar PNP transistor, it is intended for use as mixer and oscillator in the VHF range |
SGS-ATES |
63 |
BF506 |
Transistor for TV TUNERS - amplifiers-mixer/oscillators |
SGS-ATES |
64 |
BF506 |
PNP Silicon RF Transistor (For VHF mixer and oscillator stages) |
Siemens |
65 |
BF506A |
Epitaxial planar PNP transistor, suggested as VHF oscillator for mixer using MOS-FET devices |
SGS-ATES |
66 |
BF507 |
NPN SILICON RF TRANSISTOR |
Siemens |
67 |
BF509 |
Silicon PNP Epitaxial Planar Low Power RF Transistor |
IPRS Baneasa |
68 |
BF509 |
Epitaxial planar PNP transistor, intended for use as controlled VHF preamplifier |
SGS-ATES |
69 |
BF509 |
Transistor for TV TUNERS - amplifiers-mixer/oscillators |
SGS-ATES |
70 |
BF509S |
Epitaxial planar PNP transistor, intended for use as controlled VHF AGC preamplifier |
SGS-ATES |
71 |
BF510 |
N-channel silicon FET |
NXP Semiconductors |
72 |
BF510 |
N-channel silicon field-effect transistors |
Philips |
73 |
BF511 |
N-channel silicon FET |
NXP Semiconductors |
74 |
BF511 |
N-channel silicon field-effect transistors |
Philips |
75 |
BF512 |
N-channel silicon FET |
NXP Semiconductors |
76 |
BF512 |
N-channel silicon field-effect transistors |
Philips |
77 |
BF513 |
N-channel silicon FET |
NXP Semiconductors |
78 |
BF513 |
N-channel silicon field-effect transistors |
Philips |
79 |
BF516 |
Epitaxial planar PNP transistor, intended as general purpose amplifier and oscillator up to 1GHz |
SGS-ATES |
80 |
BF516 |
RF transistor |
SGS-ATES |
81 |
BF517 |
RF-Bipolar - For amplifier and oscillator applications in TV-tuners |
Infineon |
82 |
BF517 |
NPN Silicon RF Transistor (For amplifier and oscillator applications in TV-tuners) |
Siemens |
83 |
BF519 |
Tranzystor wielkiej cz�stotliwo�ci |
Ultra CEMI |
84 |
BF520 |
Tranzystor wielkiej cz�stotliwo�ci |
Ultra CEMI |
85 |
BF521 |
Tranzystor wielkiej cz�stotliwo�ci |
Ultra CEMI |
86 |
BF543 |
RF-MOSFET - VDS=15V, gfs=12mS, Gp=22dB, F=1dB |
Infineon |
87 |
BF543 |
Silicon N Channel MOS FET Triode (For RF stages up to 300 MHz preferably in FM applications) |
Siemens |
88 |
BF545A |
N-channel FET |
NXP Semiconductors |
89 |
BF545A |
N-channel silicon junction field-effect transistors |
Philips |
90 |
BF545B |
N-channel FET |
NXP Semiconductors |
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