| No. |
Part Name |
Description |
Manufacturer |
| 61 |
1N3818B |
Diode Forward Ref. Stabistor 1.75V 2-Pin DO-35 |
New Jersey Semiconductor |
| 62 |
1N3819 |
Diode Forward Ref. Stabistor 1.75V 2-Pin DO-35 |
New Jersey Semiconductor |
| 63 |
1N3819A |
Diode Forward Ref. Stabistor 1.75V 2-Pin DO-35 |
New Jersey Semiconductor |
| 64 |
1N3819B |
Diode Forward Ref. Stabistor 1.75V 2-Pin DO-35 |
New Jersey Semiconductor |
| 65 |
1N38B |
Diode Forward Ref. Stabistor 1.75V 2-Pin DO-35 |
New Jersey Semiconductor |
| 66 |
1N4156 |
Stabistor Diode |
Microsemi |
| 67 |
1N4157 |
Stabistor Diode |
Microsemi |
| 68 |
1N4453 |
Stabistor Diode |
Microsemi |
| 69 |
1N4829 |
Stabistor Diode |
Microsemi |
| 70 |
1N4830 |
Stabistor Diode |
Microsemi |
| 71 |
1N5179 |
Stabistor Diode |
Microsemi |
| 72 |
1N816 |
Leaded Zener Diode Stabistor |
Central Semiconductor |
| 73 |
2PB1424 |
20 V, 3 A PNP low VCEsat (BISS) transistor |
Nexperia |
| 74 |
2PB1424 |
20 V, 3 A PNP low VCEsat (BISS) transistor |
NXP Semiconductors |
| 75 |
2PB1424 |
20 V, 3 A PNP low VCEsat (BISS) transistor |
Philips |
| 76 |
2PD2150 |
20 V, 3 A NPN low VCEsat (BISS) transistor |
Nexperia |
| 77 |
2PD2150 |
20 V, 3 A NPN low VCEsat (BISS) transistor |
NXP Semiconductors |
| 78 |
2PD2150 |
20 V, 3 A NPN low VCEsat (BISS) transistor |
Philips |
| 79 |
2SB1314 |
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION |
Mitsubishi Electric Corporation |
| 80 |
2SC1324 |
MITSUBISHI RF POWER TRANSISTOR |
Mitsubishi Electric Corporation |
| 81 |
2SC1324 |
MITSUBISHI RF POWER TRANSISTOR |
Mitsubishi Electric Corporation |
| 82 |
2SC1729 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 83 |
2SC1944 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 84 |
2SC1945 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 85 |
2SC1946 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 86 |
2SC1946A |
MITSUBISHI RF POWER TRANSISTOR |
Mitsubishi Electric Corporation |
| 87 |
2SC1946A |
MITSUBISHI RF POWER TRANSISTOR |
Mitsubishi Electric Corporation |
| 88 |
2SC1947 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 89 |
2SC1966 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 90 |
2SC1967 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
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