No. |
Part Name |
Description |
Manufacturer |
61 |
HYB5118165BJ-50 |
1M x 16-Bit Dynamic RAM 1k & 4k Refresh |
Siemens |
62 |
HYB514100BJ-50 |
4M x 1 Bit FPM DRAM 5 V 50 ns |
Infineon |
63 |
HYB514100BJ-50 |
4M x 1-Bit Dynamic RAM |
Siemens |
64 |
HYB514100BJ-50 |
-4M x 1-Bit Dynamic RAM |
Siemens |
65 |
HYB514100BJ-50 |
-4M x 1-Bit Dynamic RAM |
Siemens |
66 |
HYB514171BJ-50 |
256k x 16 Bit FPM DRAM 5 V 50 ns |
Infineon |
67 |
HYB514171BJ-50 |
-256k x 16-Bit Dynamic RAM |
Siemens |
68 |
HYB514171BJ-50 |
256k x 16-Bit Dynamic RAM |
Siemens |
69 |
HYB514171BJ-50 |
-256k x 16-Bit Dynamic RAM |
Siemens |
70 |
HYB514175BJ-50 |
256k x 16 Bit EDO DRAM 5 V 50 ns |
Infineon |
71 |
HYB514175BJ-50 |
-256k x 16-Bit EDO-DRAM |
Siemens |
72 |
HYB514175BJ-50 |
256k x 16-Bit EDO-DRAM |
Siemens |
73 |
HYB514175BJ-50 |
-256k x 16-Bit EDO-DRAM |
Siemens |
74 |
HYB514175BJ-55 |
256k x 16 Bit EDO DRAM 5 V 55 ns |
Infineon |
75 |
HYB514175BJ-55 |
256k x 16-Bit EDO-DRAM |
Siemens |
76 |
HYB514256BJ-50 |
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
Siemens |
77 |
HYB514265BJ-50 |
256K x 16-Bit EDO-Dynamic RAM |
Siemens |
78 |
HYB514400BJ-50 |
1M x 4 Bit FPM DRAM 5 V 50 ns |
Infineon |
79 |
HYB514400BJ-50 |
-1M x 4-Bit Dynamic RAM |
Siemens |
80 |
HYB514400BJ-50 |
1M x 4-Bit Dynamic RAM |
Siemens |
81 |
HYB514400BJ-50 |
1M x 4-BIT DYNAMIC RAM LOW POWER 1M x 4-BIT DYNAMIC RAM |
Siemens |
82 |
HYB514400BJ-50 |
-1M x 4-Bit Dynamic RAM |
Siemens |
83 |
HYB514405BJ-50 |
1M x 4 Bit EDO DRAM 5 V 50 ns |
Infineon |
84 |
HYB514405BJ-50 |
1M x 4-Bit Dynamic RAM |
Siemens |
85 |
KM416C1000BJ-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
86 |
KM416C1004BJ-5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
87 |
KM416C1200BJ-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
88 |
KM416C1204BJ-5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
89 |
KM416V1000BJ-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
90 |
KM416V1004BJ-5 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
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