No. |
Part Name |
Description |
Manufacturer |
61 |
KM68V1000BLR-10 |
128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
Samsung Electronic |
62 |
KM68V1000BLR-10L |
128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
Samsung Electronic |
63 |
KM68V1000BLR-7 |
128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
Samsung Electronic |
64 |
KM68V1000BLR-7L |
128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
Samsung Electronic |
65 |
KM68V1000BLRE-10 |
128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
Samsung Electronic |
66 |
KM68V1000BLRE-10L |
128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
Samsung Electronic |
67 |
KM68V1000BLRE-7 |
128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
Samsung Electronic |
68 |
KM68V1000BLRE-7L |
128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
Samsung Electronic |
69 |
KM68V1000BLRI-10 |
128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
Samsung Electronic |
70 |
KM68V1000BLRI-10L |
128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
Samsung Electronic |
71 |
KM68V1000BLRI-7 |
128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
Samsung Electronic |
72 |
KM68V1000BLRI-7L |
128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
Samsung Electronic |
73 |
MRF18030BLR3 |
GSM/GSM EDGE 1.93–1.99 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
74 |
NN5118160BLRR-40 |
CMOS 1M x 16BIT DYNAMIC RAM |
etc |
75 |
NN5118160BLRR-50 |
CMOS 1M x 16BIT DYNAMIC RAM |
etc |
76 |
NN5118160BLRR-60 |
CMOS 1M x 16BIT DYNAMIC RAM |
etc |
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