Datasheets for BLS

Datasheets found :: 253

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No.	Part Name	Description	Manufacturer
61	HDBLS105G	Discrete Devices -Bridge Rectifier-High Efficiency Recovery Bridge	Taiwan Semiconductor
62	HDBLS106G	Discrete Devices -Bridge Rectifier-High Efficiency Recovery Bridge	Taiwan Semiconductor
63	HDBLS107G	Discrete Devices -Bridge Rectifier-High Efficiency Recovery Bridge	Taiwan Semiconductor
64	HDBLS151G	Bridge: Standard	Taiwan Semiconductor
65	HDBLS152G	Bridge: Standard	Taiwan Semiconductor
66	HDBLS153G	Bridge: Standard	Taiwan Semiconductor
67	HDBLS154G	Bridge: Standard	Taiwan Semiconductor
68	HDBLS155G	Bridge: Standard	Taiwan Semiconductor
69	HDBLS156G	Bridge: Standard	Taiwan Semiconductor
70	HDBLS157G	Bridge: Standard	Taiwan Semiconductor
71	HDBLS158G	Bridge: Standard	Taiwan Semiconductor
72	HDBLS159G	Bridge: Standard	Taiwan Semiconductor
73	HM514400BLS-6	1,048,576-word x 4-bit dynamic random access memory, 60ns	Hitachi Semiconductor
74	HM514400BLS-7	1,048,576-word x 4-bit dynamic random access memory, 70ns	Hitachi Semiconductor
75	HM514400BLS-8	1,048,576-word x 4-bit dynamic random access memory, 80ns	Hitachi Semiconductor
76	HM62256BLSP-7	256k SRAM (32-kword x 8-bit)	Hitachi Semiconductor
77	HM62256BLSP-7SL	256k SRAM (32-kword x 8-bit)	Hitachi Semiconductor
78	HM6264BLSP-10L	64 k SRAM (8-kword x 8-bit)	Hitachi Semiconductor
79	HM6264BLSP-8L	64 k SRAM (8-kword x 8-bit)	Hitachi Semiconductor
80	HM6264BLSP-XXL	Low Power SRAMs	Hitachi Semiconductor
81	ISL9N7030BLS3ST	30V, 0.009 Ohm, 75A, N-Channel Logic Level UltraFET� Trench Power MOSFETs	Fairchild Semiconductor
82	MRF18030BLSR3	GSM/GSM EDGE 1.93–1.99 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET	Freescale (Motorola)
83	MRF18060B	MRF18060B, MRF18060BR3, MRF18060BLSR3, MRF18060BSR3 1.90-1.99 GHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs	Motorola
84	MRF18060BLSR3	1.90–1.99 GHz, 60 W, 26 V Lateral N–Channel RF Power MOSFET	Freescale (Motorola)
85	MRF18060BLSR3	RF Power Field Effect Transistors	Motorola
86	MRF18085B	MRF18085B, MRF18085BR3, MRF18085BLSR3 GSM/GSM EDGE 1.9-1.99 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs	Motorola
87	MRF18085BLSR3	RF Power Field Effect Transistors	Motorola
88	PBLS1501V	15 V PNP BISS loadswitch	Nexperia
89	PBLS1501V	15 V PNP BISS loadswitch	NXP Semiconductors
90	PBLS1501V	PBLS1501Y; PBLS1501V; 15 V PNP BISS loadswitch	Philips

Datasheets found :: 253

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