| No. |
Part Name |
Description |
Manufacturer |
| 61 |
HYB5117400BT-60 |
4M x 4-Bit Dynamic RAM |
Siemens |
| 62 |
HYB5117400BT-600 |
4M x 4bit DRAM |
Siemens |
| 63 |
HYB5117405BT-60 |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
Siemens |
| 64 |
HYB5117405BT-600 |
4M x 4bit DRAM |
Siemens |
| 65 |
HYB514400BT-60 |
1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM |
Siemens |
| 66 |
KM416C1000BT-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 67 |
KM416C1004BT-6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
| 68 |
KM416C1200BT-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 69 |
KM416C1204BT-6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
| 70 |
KM416V1000BT-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 71 |
KM416V1004BT-6 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
| 72 |
KM416V1200BT-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 73 |
KM416V1204BT-6 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
| 74 |
TCBT-6G |
Surface Mount Bias-Tees Wideband 50 to 6000 MHz |
Mini-Circuits |
| 75 |
VG3617161BT-6 |
16Mb CMOS Synchronous Dynamic RAM |
etc |
| 76 |
ZNBT-60-1W |
Bias-Tee Wideband/ 2.5 to 6000 MHz |
Mini-Circuits |
| | | |
