No. |
Part Name |
Description |
Manufacturer |
61 |
CY2CC1810SC |
Low-voltage operation |
Cypress |
62 |
CY2CC1810SCT |
1:10 Clock Fanout Buffer with Output Enable |
Cypress |
63 |
CY2CC1810SI |
Low-voltage operation |
Cypress |
64 |
CY2CC1810SIT |
1:10 Clock Fanout Buffer with Output Enable |
Cypress |
65 |
ECHU1C181GX5 |
Film Capacitors (Electronic Equipment Use) ECHU(X) |
Panasonic |
66 |
ECHU1C181JX5 |
Film Capacitors (Electronic Equipment Use) ECHU(X) |
Panasonic |
67 |
EEUFB1C181 |
Aluminum Electrolytic Capacitors (Radial Lead Type) FB-A |
Panasonic |
68 |
EEUFB1C181B |
Aluminum Electrolytic Capacitors (Radial Lead Type) FB-A |
Panasonic |
69 |
EEUFB1C181E |
Aluminum Electrolytic Capacitors (Radial Lead Type) FB-A |
Panasonic |
70 |
EEUFB1C181H |
Aluminum Electrolytic Capacitors (Radial Lead Type) FB-A |
Panasonic |
71 |
ERA1AEC181C |
High Precision Thin Film Chip Resistors, High Reliability Type |
Panasonic |
72 |
ERA2AEC181X |
High Precision Thin Film Chip Resistors, High Reliability Type |
Panasonic |
73 |
ERA3AEC181V |
High Precision Thin Film Chip Resistors, High Reliability Type |
Panasonic |
74 |
ERA6AEC181V |
High Precision Thin Film Chip Resistors, High Reliability Type |
Panasonic |
75 |
ERA8AEC181V |
High Precision Thin Film Chip Resistors, High Reliability Type |
Panasonic |
76 |
EXBD10C181J |
Chip Resistor Networks |
Panasonic |
77 |
EXBE10C181J |
Chip Resistor Networks |
Panasonic |
78 |
FMC1819C6-02 |
K-Band Power GaAs Modules |
Fujitsu Microelectronics |
79 |
FMC1819LN-02 |
K-Band Power GaAs Modules |
Fujitsu Microelectronics |
80 |
FMC1819P1-01 |
K-Band Power GaAs Modules |
Fujitsu Microelectronics |
81 |
GM71C18163AJ-6 |
1,048,576 words x 16 bit DRAM, 60ns |
LG Semiconductor |
82 |
GM71C18163AJ-7 |
1,048,576 words x 16 bit DRAM, 70ns |
LG Semiconductor |
83 |
GM71C18163AJ-8 |
1,048,576 words x 16 bit DRAM, 80ns |
LG Semiconductor |
84 |
GM71C18163AT-6 |
1,048,576 words x 16 bit DRAM, 60ns |
LG Semiconductor |
85 |
GM71C18163AT-7 |
1,048,576 words x 16 bit DRAM, 70ns |
LG Semiconductor |
86 |
GM71C18163AT-8 |
1,048,576 words x 16 bit DRAM, 80ns |
LG Semiconductor |
87 |
GM71C18163C |
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
88 |
GM71C18163C-5 |
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
89 |
GM71C18163C-6 |
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
90 |
GM71C18163C-7 |
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
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