No. |
Part Name |
Description |
Manufacturer |
61 |
EPM3512AFC256-10 |
Programmable logic , 512 macrocells, 32 logic array blocks, 208 I/O pins, 10ns |
Altera Corporation |
62 |
EPM7128AEFC256-10 |
Programmable logic , 128 macrocells, 8 logic array blocks, 100 I/O pins, 10ns |
Altera Corporation |
63 |
EPM7256AEFC256-10 |
Programmable logic , 256 macrocells, 16 logic array blocks, 164 I/O pins, 10ns |
Altera Corporation |
64 |
EPM7512AEBC256-10 |
Programmable logic , 512 macrocells, 32 logic array blocks, 212 I/O pins, 10ns |
Altera Corporation |
65 |
EPM7512AEFC256-10 |
Programmable logic , 512 macrocells, 32 logic array blocks, 212 I/O pins, 10ns |
Altera Corporation |
66 |
HY62C256-10 |
32K x 8-BIT CMOS SRAM |
Hynix Semiconductor |
67 |
SMJ44C256-10 |
262144 by 4-bit dynamic random-access memory |
Austin Semiconductor |
68 |
TMS27C/PC256-10 |
TMS27C256 32768 BY 8-BIT UV ERASABLE TMS27PC256 32768 BY 8-BIT PROGRAMMABLE READ-ONLY MEMORIES |
Texas Instruments |
69 |
TMS27C256-10 |
100ns; V(cc): -0.6 to +7V; 8-bit programmable read-only memory |
Texas Instruments |
70 |
TMS27C256-10JL |
262 144-Bitprogrammable Read-Only Memory 28-CDIP 0 to 70 |
Texas Instruments |
71 |
TMS27PC256-10 |
100ns; V(cc): -0.6 to +7V; 8-bit programmable read-only memory |
Texas Instruments |
72 |
TMS27PC256-10FML |
262 144-Bitprogrammable Read-Only Memory |
Texas Instruments |
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