| No. |
Part Name |
Description |
Manufacturer |
| 61 |
KBPC810 |
Diode Rectifier Bridge Single 1KV 8A 4-Pin D-72 |
New Jersey Semiconductor |
| 62 |
KBPC810 |
8.0A SINGLE - PHASE SILICON BRIDGE |
Semtech |
| 63 |
KBPC810 |
SINGLE PHASE SILICON BRIDGE RECTIFIER |
Shanghai Sunrise Electronics |
| 64 |
KBPC810 |
SINGLE PHASE SILICON BRIDGE RECTIFIER |
Shanghai Sunrise Electronics |
| 65 |
KBPC810 |
8.0A BRIDGE RECTIFIER |
Won-Top Electronics |
| 66 |
KBPC810G |
SINGLE PHASE 8.0 AMPS. GLASS PASSIVATED BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
| 67 |
KBPC810G |
8.0A GLASS PASSIVATED BRIDGE RECTIFIER |
Won-Top Electronics |
| 68 |
KC810 |
NPN transistor pairs for differential amplifiers |
Tesla Elektronicke |
| 69 |
KM48C8104B |
8M x 8bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 70 |
KM48C8104BK-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 5V, 45ns |
Samsung Electronic |
| 71 |
KM48C8104BK-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 5V, 50ns |
Samsung Electronic |
| 72 |
KM48C8104BK-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 5V, 60ns |
Samsung Electronic |
| 73 |
KM48C8104BS-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 5V, 45ns |
Samsung Electronic |
| 74 |
KM48C8104BS-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 5V, 50ns |
Samsung Electronic |
| 75 |
KM48C8104BS-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 5V, 60ns |
Samsung Electronic |
| 76 |
LC810 |
LC 810 High Density Power Converter |
PerkinElmer Optoelectronics |
| 77 |
LMC8101 |
Rail-to-Rail Input and Output, 2.7V Op Amp in micro SMD package with Shutdown |
National Semiconductor |
| 78 |
LMC8101 |
Rail-to-Rail Input and Output, 2.7V Op Amp in micro SMD package with Shutdown |
Texas Instruments |
| 79 |
LMC8101BP |
Rail-to-Rail Input and Output, 2.7V Op Amp in micro SMD package with Shutdown |
National Semiconductor |
| 80 |
LMC8101BPX |
Rail-to-Rail Input and Output, 2.7V Op Amp in micro SMD package with Shutdown |
National Semiconductor |
| 81 |
LMC8101MM |
Rail-to-Rail Input and Output, 2.7V Op Amp in micro SMD package with Shutdown |
National Semiconductor |
| 82 |
LMC8101MM |
Rail-to-Rail Input and Output, 2.7V Op Amp in micro SMD package with Shutdown 8-VSSOP -40 to 85 |
Texas Instruments |
| 83 |
LMC8101MM/NOPB |
Rail-to-Rail Input and Output, 2.7V Op Amp in micro SMD package with Shutdown 8-VSSOP -40 to 85 |
Texas Instruments |
| 84 |
LMC8101MMX |
Rail-to-Rail Input and Output, 2.7V Op Amp in micro SMD package with Shutdown |
National Semiconductor |
| 85 |
LMC8101MMX/NOPB |
Rail-to-Rail Input and Output, 2.7V Op Amp in micro SMD package with Shutdown 8-VSSOP -40 to 85 |
Texas Instruments |
| 86 |
LMC8101TP |
Rail-to-Rail Input and Output, 2.7V Op Amp in micro SMD package with Shutdown |
National Semiconductor |
| 87 |
LMC8101TP/NOPB |
Rail-to-Rail Input and Output, 2.7V Op Amp in micro SMD package with Shutdown 8-DSBGA -40 to 85 |
Texas Instruments |
| 88 |
LMC8101TPX |
Rail-to-Rail Input and Output, 2.7V Op Amp in micro SMD package with Shutdown |
National Semiconductor |
| 89 |
LMC8101TPX/NOPB |
Rail-to-Rail Input and Output, 2.7V Op Amp in micro SMD package with Shutdown 8-DSBGA -40 to 85 |
Texas Instruments |
| 90 |
LPC810M021FN8 |
32-bit ARM Cortex-M0+ microcontroller; 4 kB flash and 1 kB SRAM |
NXP Semiconductors |
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