No. |
Part Name |
Description |
Manufacturer |
61 |
CM100DY-24H |
Dual IGBTMOD 100 Amperes/1200 Volts |
Powerex Power Semiconductors |
62 |
CM100DY-24NF |
HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
63 |
CM100DY-28H |
Dual IGBTMOD 100 Amperes/1400 Volts |
Powerex Power Semiconductors |
64 |
CM100E3U-12F |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
65 |
CM100E3U-12H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
66 |
CM100E3U-12H |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
67 |
CM100E3U-12H |
Chopper IGBTMOD 100 Amperes/600 Volts |
Powerex Power Semiconductors |
68 |
CM100E3U-24F |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
69 |
CM100E3U-24H |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
70 |
CM100E3U-24H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
71 |
CM100E3U-24H |
Chopper IGBTMOD 100 Amperes/1200 Volts |
Powerex Power Semiconductors |
72 |
CM100HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
73 |
CM100TF-12H |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
74 |
CM100TF-12H |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
75 |
CM100TF-12H |
Six-IGBT IGBTMOD 100 Amperes/600 Volts |
Powerex Power Semiconductors |
76 |
CM100TF-24 |
HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
77 |
CM100TF-24H |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
78 |
CM100TF-24H |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
79 |
CM100TF-24H |
Six-IGBT IGBTMOD 100 Amperes/1200 Volts |
Powerex Power Semiconductors |
80 |
CM100TF-28H |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
81 |
CM100TF-28H |
IGBT Modules:1400V |
Mitsubishi Electric Corporation |
82 |
CM100TF-28H |
Six-IGBT IGBTMOD 100 Amperes/1400 Volts |
Powerex Power Semiconductors |
83 |
CM100TJ-12F |
Trench Gate Design 100 Amperes/600 Volts |
Powerex Power Semiconductors |
84 |
CM100TJ-24F |
Trench Gate Design Six IGBTMOD�� 100 Amperes/1200 Volts |
Powerex Power Semiconductors |
85 |
CM100TU-12F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
86 |
CM100TU-12F |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
87 |
CM100TU-12F |
Trench Gate Design Six IGBTMOD�� 100 Amperes/600 Volts |
Powerex Power Semiconductors |
88 |
CM100TU-12H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
89 |
CM100TU-12H |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
90 |
CM100TU-12H |
Six IGBTMOD 100 Amperes/600 Volts |
Powerex Power Semiconductors |
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