| No. |
Part Name |
Description |
Manufacturer |
| 61 |
CXXX-CB230-E1000 |
5V; 125mA; super bright LED. For communication handsets, backlighting, high resolution video displays |
CREE POWER |
| 62 |
CXXX-CB290-S0100 |
5V; 30mA; super bright LED. For outdoor LED video displays, automative dashboard lighting, white LEDs, backlighting |
CREE POWER |
| 63 |
CXXX-MB290-E1000 |
5V; 30mA; super bright LED. For outdoor LED video displays, automative dashboard lighting, white LEDs, backlighting |
CREE POWER |
| 64 |
CXXX-MB290-S0100 |
5V; 30mA; super bright LED. For outdoor LED video displays, automative dashboard lighting, white LEDs, backlighting |
CREE POWER |
| 65 |
CXXX-UB290-S1000 |
5V; 30mA; super bright LED. For outdoor LED video displays, automative dashboard lighting, white LEDs, backlighting |
CREE POWER |
| 66 |
CXXX-UB29X-S0100 |
5V; 30mA; super bright LED. For outdoor LED video displays, automative dashboard lighting, white LEDs, backlighting |
CREE POWER |
| 67 |
QTLP601CBTR |
Cree 430nm Blue Surface Mount LED Lamp - Standard Bright 0603 (0.6 mm Height) |
Fairchild Semiconductor |
| 68 |
QTLP610CBTR |
Cree 430nm Blue Surface Mount LED Lamp - Standard Bright Right Angle |
Fairchild Semiconductor |
| 69 |
QTLP630CBTR |
Cree 430nm Blue Surface Mount LED Lamp (0805) Chip Type - Water Clear |
Fairchild Semiconductor |
| 70 |
QTLP650CBTR |
Cree 430nm Blue Surface Mount LED Lamp - Standard Bright 1206 |
Fairchild Semiconductor |
| 71 |
QTLP651CBTR |
Cree 430nm Blue Surface Mount LED Lamp - Super Bright 1206 (Inner Lens) |
Fairchild Semiconductor |
| 72 |
QTLP652CBTR |
Cree 430nm Blue Surface Mount LED Lamp - Standard Bright 1206 (Reverse Mount) |
Fairchild Semiconductor |
| 73 |
QTLP660CBTR |
Cree 430nm Blue Surface Mount LED Lamp - Standard Bright 1.8mm (Dome Lens) |
Fairchild Semiconductor |
| 74 |
QTLP670C |
GaN White, HER, Yellow, Green, AlGaAs, Cree 430nm Surface Mount LED Lamp - Standard Bright PLCC-2 |
Fairchild Semiconductor |
| 75 |
QTLP670C2TR |
GaN White, HER, Yellow, Green, AlGaAs, Cree 430nm Surface Mount LED Lamp - Standard Bright PLCC-2 |
Fairchild Semiconductor |
| 76 |
QTLP670C3TR |
GaN White, HER, Yellow, Green, AlGaAs, Cree 430nm Surface Mount LED Lamp - Standard Bright PLCC-2 |
Fairchild Semiconductor |
| 77 |
QTLP670C4TR |
GaN White, HER, Yellow, Green, AlGaAs, Cree 430nm Surface Mount LED Lamp - Standard Bright PLCC-2 |
Fairchild Semiconductor |
| 78 |
QTLP670C7TR |
GaN White, HER, Yellow, Green, AlGaAs, Cree 430nm Surface Mount LED Lamp - Standard Bright PLCC-2 |
Fairchild Semiconductor |
| 79 |
QTLP670CBTR |
GaN White, HER, Yellow, Green, AlGaAs, Cree 430nm Surface Mount LED Lamp - Standard Bright PLCC-2 |
Fairchild Semiconductor |
| 80 |
W4NRD0X-0000 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 81 |
W4NRD8C-U000 |
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 82 |
W4NXD8C-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 83 |
W4NXD8C-L000 |
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 84 |
W4NXD8C-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 85 |
W4NXD8D-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 86 |
W4NXD8D-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 87 |
W4NXD8G-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 88 |
W6NRD0X-0000 |
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 89 |
W6NRE0X-0000 |
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 90 |
W6NXD0K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
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