| No. |
Part Name |
Description |
Manufacturer |
| 61 |
CSD882 |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772 |
Continental Device India Limited |
| 62 |
CSD882E |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E |
Continental Device India Limited |
| 63 |
CSD882P |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P |
Continental Device India Limited |
| 64 |
CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q |
Continental Device India Limited |
| 65 |
CSD882R |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R |
Continental Device India Limited |
| 66 |
CSD88537ND |
60-V Dual N-Channel NexFET Power MOSFET, CSD88537ND 8-SOIC -55 to 150 |
Texas Instruments |
| 67 |
CSD88537ND |
60-V Dual N-Channel NexFET Power MOSFET, CSD88537ND 8-SOIC -55 to 150 |
Texas Instruments |
| 68 |
CSD88537NDT |
60-V Dual N-Channel NexFET Power MOSFET, CSD88537ND 8-SOIC -55 to 150 |
Texas Instruments |
| 69 |
CSD88537NDT |
60-V Dual N-Channel NexFET Power MOSFET, CSD88537ND 8-SOIC -55 to 150 |
Texas Instruments |
| 70 |
CSD88539ND |
60-V Dual N-Channel NexFET Power MOSFET, CSD88539ND 8-SOIC -55 to 150 |
Texas Instruments |
| 71 |
CSD88539ND |
60-V Dual N-Channel NexFET Power MOSFET, CSD88539ND 8-SOIC -55 to 150 |
Texas Instruments |
| 72 |
CSD88539NDT |
60-V Dual N-Channel NexFET Power MOSFET, CSD88539ND 8-SOIC -55 to 150 |
Texas Instruments |
| 73 |
CSD88539NDT |
60-V Dual N-Channel NexFET Power MOSFET, CSD88539ND 8-SOIC -55 to 150 |
Texas Instruments |
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