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Datasheets for CSL

Datasheets found :: 147
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
61 HY62SF16101CSLF-I HY62SF16101C Series 64Kx16bit full CMOS SRAM Hynix Semiconductor
62 HY62UF16101CSLF 64Kx16bit full CMOS SRAM Hynix Semiconductor
63 HY62UF16101CSLF-I 64Kx16bit full CMOS SRAM Hynix Semiconductor
64 ICS87159 1-to-8 LVPECL-to-HCSL ÷1, ÷2, ÷4 Clock Generator Texas Instruments
65 ICS9DB202 Two 0.7V current mode differential HCSL output pairs, 1 differential clock input Integrated Circuit Systems
66 ICS9DB202CF Two 0.7V current mode differential HCSL output pairs, 1 differential clock input Integrated Circuit Systems
67 ICS9DB202CFLFT Two 0.7V current mode differential HCSL output pairs, 1 differential clock input Integrated Circuit Systems
68 ICS9DB202CFT Two 0.7V current mode differential HCSL output pairs, 1 differential clock input Integrated Circuit Systems
69 ICS9DB202CG Two 0.7V current mode differential HCSL output pairs, 1 differential clock input Integrated Circuit Systems
70 ICS9DB202CGLF Two 0.7V current mode differential HCSL output pairs, 1 differential clock input Integrated Circuit Systems
71 ICS9DB202CGLFT Two 0.7V current mode differential HCSL output pairs, 1 differential clock input Integrated Circuit Systems
72 ICS9DB202CGT Two 0.7V current mode differential HCSL output pairs, 1 differential clock input Integrated Circuit Systems
73 KM44C256CSL-6 60ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode Samsung Electronic
74 KM44C256CSL-7 70ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode Samsung Electronic
75 KM44C256CSL-8 80ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode Samsung Electronic
76 KM44C4000CSL-5 4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Samsung Electronic
77 KM44C4000CSL-6 4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Samsung Electronic
78 KM44C4003CSL-5 4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns Samsung Electronic
79 KM44C4003CSL-6 4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns Samsung Electronic
80 KM44C4005CSL-5 4M x 4bit CMOS quad CAS DRAM with extended data out, 50ns Samsung Electronic
81 KM44C4005CSL-6 4M x 4bit CMOS quad CAS DRAM with extended data out, 60ns Samsung Electronic
82 KM44C4100CSL-5 4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Samsung Electronic
83 KM44C4100CSL-6 4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Samsung Electronic
84 KM44C4103CSL-5 4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns Samsung Electronic
85 KM44C4103CSL-6 4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns Samsung Electronic
86 KM44C4105CSL-5 4M x 4bit CMOS quad CAS DRAM with extended data out, 50ns Samsung Electronic
87 KM44C4105CSL-6 4M x 4bit CMOS quad CAS DRAM with extended data out, 60ns Samsung Electronic
88 KM44V4000CSL-5 4M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns Samsung Electronic
89 KM44V4000CSL-6 4M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Samsung Electronic
90 KM44V4100CSL-5 4M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns Samsung Electronic


Datasheets found :: 147
Page: | 1 | 2 | 3 | 4 | 5 |



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