No. |
Part Name |
Description |
Manufacturer |
61 |
HY62SF16101CSLF-I |
HY62SF16101C Series 64Kx16bit full CMOS SRAM |
Hynix Semiconductor |
62 |
HY62UF16101CSLF |
64Kx16bit full CMOS SRAM |
Hynix Semiconductor |
63 |
HY62UF16101CSLF-I |
64Kx16bit full CMOS SRAM |
Hynix Semiconductor |
64 |
ICS87159 |
1-to-8 LVPECL-to-HCSL ÷1, ÷2, ÷4 Clock Generator |
Texas Instruments |
65 |
ICS9DB202 |
Two 0.7V current mode differential HCSL output pairs, 1 differential clock input |
Integrated Circuit Systems |
66 |
ICS9DB202CF |
Two 0.7V current mode differential HCSL output pairs, 1 differential clock input |
Integrated Circuit Systems |
67 |
ICS9DB202CFLFT |
Two 0.7V current mode differential HCSL output pairs, 1 differential clock input |
Integrated Circuit Systems |
68 |
ICS9DB202CFT |
Two 0.7V current mode differential HCSL output pairs, 1 differential clock input |
Integrated Circuit Systems |
69 |
ICS9DB202CG |
Two 0.7V current mode differential HCSL output pairs, 1 differential clock input |
Integrated Circuit Systems |
70 |
ICS9DB202CGLF |
Two 0.7V current mode differential HCSL output pairs, 1 differential clock input |
Integrated Circuit Systems |
71 |
ICS9DB202CGLFT |
Two 0.7V current mode differential HCSL output pairs, 1 differential clock input |
Integrated Circuit Systems |
72 |
ICS9DB202CGT |
Two 0.7V current mode differential HCSL output pairs, 1 differential clock input |
Integrated Circuit Systems |
73 |
KM44C256CSL-6 |
60ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
74 |
KM44C256CSL-7 |
70ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
75 |
KM44C256CSL-8 |
80ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
76 |
KM44C4000CSL-5 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
77 |
KM44C4000CSL-6 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
78 |
KM44C4003CSL-5 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns |
Samsung Electronic |
79 |
KM44C4003CSL-6 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns |
Samsung Electronic |
80 |
KM44C4005CSL-5 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 50ns |
Samsung Electronic |
81 |
KM44C4005CSL-6 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 60ns |
Samsung Electronic |
82 |
KM44C4100CSL-5 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
83 |
KM44C4100CSL-6 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
84 |
KM44C4103CSL-5 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns |
Samsung Electronic |
85 |
KM44C4103CSL-6 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns |
Samsung Electronic |
86 |
KM44C4105CSL-5 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 50ns |
Samsung Electronic |
87 |
KM44C4105CSL-6 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 60ns |
Samsung Electronic |
88 |
KM44V4000CSL-5 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
89 |
KM44V4000CSL-6 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
90 |
KM44V4100CSL-5 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
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