| No. |
Part Name |
Description |
Manufacturer |
| 61 |
1N5540B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 62 |
1N5540B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 63 |
1N5541B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 64 |
1N5541B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 65 |
1N5542B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 66 |
1N5542B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 67 |
1N5543B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 68 |
1N5543B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 69 |
1N5544B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 70 |
1N5544B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 71 |
1N5545B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 72 |
1N5545B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 73 |
1N5546B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 74 |
1N5546B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 75 |
1SS97 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
| 76 |
1SS98 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
| 77 |
1SS99 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
| 78 |
2N5431 |
Silicon annular unijunction transistor characterized primarily for low interbase-voltage operation in sensing, pulse triggering, and timing circuits |
Motorola |
| 79 |
2N6104 |
Characteristics and Broadband (225-to-400MHz) Applications of the RCA-2N6104 and 2N6105 UHF Power Transistors - App. Note |
RCA Solid State |
| 80 |
2N6105 |
Characteristics and Broadband (225-to-400MHz) Applications of the RCA-2N6104 and 2N6105 UHF Power Transistors - App. Note |
RCA Solid State |
| 81 |
2SA1223 |
PNP silicon high frequency transistor (This datasheet of the NE88935 is also the datasheet of 2SA1223, see the Electrical Characteristics table) |
NEC |
| 82 |
2SA1224 |
PNP medium power microwave transistor (This datasheet of the NE90115 is also the datasheet of 2SA1224, see the Electrical Characteristics table) |
NEC |
| 83 |
2SA1228 |
PNP silicon high frequency transistor (This datasheet of NE88912 is also the datasheet of 2SA1228, see the Electrical Characteristics table) |
NEC |
| 84 |
2SA1424 |
PNP silicon high frequency transistor (This datasheet of NE88933 is also the datasheet of 2SA1424, see the Electrical Characteristics table) |
NEC |
| 85 |
2SC1252 |
NPN medium power UHF-VHF transistor (This datasheet of NE74114 is also the datasheet of 2SC1252, see the Electrical Characteristics table) |
NEC |
| 86 |
2SC1260 |
NPN silicon microwave transistor (This datasheet of NE87112 is also the datasheet of 2SC1260, see the Electrical Characteristics table) |
NEC |
| 87 |
2SC1365 |
NPN medium power UHF-VHF transistor (This datasheet of NE74113 is also the datasheet of 2SC1365, see the Electrical Characteristics table) |
NEC |
| 88 |
2SC1424 |
NPN silicon general purpose transistor (This datasheet of the NE73412 is also the datasheet of 2SC1424, see the Electrical Characteristics table) |
NEC |
| 89 |
2SC1426 |
NPN medium power UHF-VHF transistor (This datasheet of NE416 series is also the datasheet of 2SC1426, see the Electrical Characteristics table) |
NEC |
| 90 |
2SC1600 |
NPN medium power microwave transistor (This datasheet of NE57510 is also the datasheet of 2SC1600-Grd D, see the Electrical Characteristics table) |
NEC |
| | | |
