| No. |
Part Name |
Description |
Manufacturer |
| 61 |
1SS315 |
Diode Silicon Epitaxial Schottky Barrier Type UHF Band Mixer Applications |
TOSHIBA |
| 62 |
1SS358 |
VHF, UHF Detector and Mixer Applications Schottky Barrier Diode |
SANYO |
| 63 |
1SS365 |
VHF, UHF Detector and Mixer Applications Schottky Barrier Diode |
SANYO |
| 64 |
1SS366 |
VHF, UHF Detector and Mixer Applications Schottky Barrier Diode |
SANYO |
| 65 |
1SS375 |
VHF, UHF Detector and Mixer Applications Schottky Barrier Diode |
SANYO |
| 66 |
1SS86 |
Schottky Barrier Diodes for Detection and Mixer |
Hitachi Semiconductor |
| 67 |
1SS88 |
Schottky Barrier Diodes for Detection and Mixer |
Hitachi Semiconductor |
| 68 |
1SS97 |
Double balanced mixer using NEEC's schottky barrier diode 1SS97 or 1SS99 - Application Note |
NEC |
| 69 |
1SS97 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
| 70 |
1SS98 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
| 71 |
1SS99 |
Double balanced mixer using NEEC's schottky barrier diode 1SS97 or 1SS99 - Application Note |
NEC |
| 72 |
1SS99 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
| 73 |
2N2857 |
NPN silicon annular small-signal amplifier transistor designed for amplifiers, oscillators and mixers |
Motorola |
| 74 |
2N3823 |
Silicon N-channel junction field-effect transistor designed for VHF amplifier and mixer applications |
Motorola |
| 75 |
2N3839 |
NPN silicon annular small-signal amplifier transistor designed for amplifiers, oscillators and mixers |
Motorola |
| 76 |
2N4223 |
Silicon N-channel junction field-effect transistor, designed for VHF amplifier and mixer applications |
Motorola |
| 77 |
2N4224 |
Silicon N-channel junction field-effect transistor, designed for VHF amplifier and mixer applications |
Motorola |
| 78 |
2N700 |
PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications |
Motorola |
| 79 |
2N700A |
PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications |
Motorola |
| 80 |
2SC3545 |
UHF OSCILLTOR AND MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 81 |
33NQ52 |
Detection and mixer point contact diode |
Tesla Elektronicke |
| 82 |
34NQ52 |
Detection and mixer point contact diode |
Tesla Elektronicke |
| 83 |
35NQ52 |
Detection and mixer point contact diode |
Tesla Elektronicke |
| 84 |
37NQ52 |
Detection and mixer point contact diode |
Tesla Elektronicke |
| 85 |
3SK176A |
RF AMP. AND MIXER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD |
NEC |
| 86 |
3SK30 |
Silicon N-Channel MOS FET, intended for use in FM/AM RF AMP. and Mixer |
Hitachi Semiconductor |
| 87 |
3SK30A |
Silicon N-Channel MOS FET, intended for use in FM/AM RF AMP. and Mixer |
Hitachi Semiconductor |
| 88 |
40468A |
MOS Field-Effect Transistor N-Channel Depletion Type, for RF Amplifier and Mixer Applications in FM and AM/FM receivers |
RCA Solid State |
| 89 |
40559A |
MOS Field-Effect Transistor N-Channel Depletion Type, for RF Amplifier and Mixer Applications in FM and AM/FM receivers |
RCA Solid State |
| 90 |
50 OHMS 50 OHMS OHMIC ADDED 9-4-92 OHMIC |
33�43 GHz GaAs MMIC Image Rejection Balanced Mixer |
Alpha Industries Inc |
| | | |
