No. |
Part Name |
Description |
Manufacturer |
61 |
BAR64-06W |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) |
Siemens |
62 |
BAR64-07 |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) |
Siemens |
63 |
BAR64-W |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) |
Siemens |
64 |
BAT14-099R |
Silicon Crossover Ring Quad RF Schott... |
Infineon |
65 |
BAT15-099R |
Silicon Crossover Ring Quad RF Schott... |
Infineon |
66 |
BAT15-099R |
Schottky Diodes - Silicon crossover ring quad RF Schottky diode |
Infineon |
67 |
BAX25 |
Silicon-schottky barrier diodes for extreme fast switching and RF applications |
AEG-TELEFUNKEN |
68 |
BAX26 |
Silicon-schottky barrier diodes for extreme fast switching and RF applications |
AEG-TELEFUNKEN |
69 |
BAX27 |
Silicon-schottky barrier diodes for extreme fast switching and RF applications |
AEG-TELEFUNKEN |
70 |
BBA-322-A |
GENERAL-PURPOSE BROADBAND RF AMPLIFIER DATA GUIDE |
etc |
71 |
BBA-519-A |
GENERAL-PURPOSE BROADBAND RF AMPLIFIER DATA GUIDE |
etc |
72 |
BFP460 |
ESD-Hardened RF-Bipolar NPN Transistors in Standard SOT343 and TSLP-3 (single) & TSLP-6 (dual) Leadless Packages |
Infineon |
73 |
BFR460L3 |
ESD-Hardened RF-Bipolar NPN Transistors in Standard SOT343 and TSLP-3 (single) & TSLP-6 (dual) Leadless Packages |
Infineon |
74 |
BFS460L6 |
ESD-Hardened RF-Bipolar NPN Transistors in Standard SOT343 and TSLP-3 (single) & TSLP-6 (dual) Leadless Packages |
Infineon |
75 |
BFS466L6 |
ESD-Hardened RF-Bipolar NPN Transistors in Standard SOT343 and TSLP-3 (single) & TSLP-6 (dual) Leadless Packages |
Infineon |
76 |
BFS469L6 |
ESD-Hardened RF-Bipolar NPN Transistors in Standard SOT343 and TSLP-3 (single) & TSLP-6 (dual) Leadless Packages |
Infineon |
77 |
BFS69 |
Silicon PNP epitaxial planar transistor for use in AF and RF applications in hybrid circuits |
AEG-TELEFUNKEN |
78 |
BFY69 |
Silicon NPN epitaxial planar transistor for AF and RF amplifiers in hybrid circuits |
AEG-TELEFUNKEN |
79 |
BFY69A |
Silicon NPN epitaxial planar transistor for AF and RF amplifiers in hybrid circuits |
AEG-TELEFUNKEN |
80 |
BFY87 |
Silicon NPN epitaxial planar transistor for AF and RF amplifiers in hybrid circuits |
AEG-TELEFUNKEN |
81 |
BFY87A |
Silicon NPN epitaxial planar transistor for AF and RF amplifiers in hybrid circuits |
AEG-TELEFUNKEN |
82 |
BG 3230 |
Two n-Channnel Automatic Gain Controlled RF-MOSFET in one Package |
Infineon |
83 |
BG 3230R |
Two n-Channnel Automatic Gain Controlled RF-MOSFET in one Package |
Infineon |
84 |
BGC405 |
Active Biased RF Transistor (RF MMIC) |
Infineon |
85 |
BSX25 |
Silicon NPN planar transistor for switching and RF applications |
AEG-TELEFUNKEN |
86 |
BSX72 |
Silicon NPN epitaxial planar transistor for high speed switching and RF amplifier circuits |
AEG-TELEFUNKEN |
87 |
BSX75 |
Silicon NPN epitaxial planar transistor for high speed switching and RF amplifier circuits |
AEG-TELEFUNKEN |
88 |
BSY55 |
Silicon NPN epitaxial planar transistor for high speed switching applications and RF aplifiers |
AEG-TELEFUNKEN |
89 |
BSY56 |
Silicon NPN epitaxial planar transistor for high speed switching applications and RF aplifiers |
AEG-TELEFUNKEN |
90 |
BSY92 |
Silicon NPN planar transistor with medium reverse voltage for switching and RF applications |
AEG-TELEFUNKEN |
| | | |