| No. |
Part Name |
Description |
Manufacturer |
| 61 |
HD64180ZCP-10 |
10MHz; V(cc) -0.3 to +7.0V; V(in): -0.3 to +0.3V; 8-bit CMOS micro processing unit |
Hitachi Semiconductor |
| 62 |
HD64180ZCP-6 |
6MHz; V(cc) -0.3 to +7.0V; V(in): -0.3 to +0.3V; 8-bit CMOS micro processing unit |
Hitachi Semiconductor |
| 63 |
HD64180ZCP-8 |
8MHz; V(cc) -0.3 to +7.0V; V(in): -0.3 to +0.3V; 8-bit CMOS micro processing unit |
Hitachi Semiconductor |
| 64 |
HD64180ZF-10 |
10MHz; V(cc) -0.3 to +7.0V; V(in): -0.3 to +0.3V; 8-bit CMOS micro processing unit |
Hitachi Semiconductor |
| 65 |
HD64180ZF-6 |
6MHz; V(cc) -0.3 to +7.0V; V(in): -0.3 to +0.3V; 8-bit CMOS micro processing unit |
Hitachi Semiconductor |
| 66 |
HD64180ZF-8 |
8MHz; V(cc) -0.3 to +7.0V; V(in): -0.3 to +0.3V; 8-bit CMOS micro processing unit |
Hitachi Semiconductor |
| 67 |
HD64180ZP-10 |
10MHz; V(cc) -0.3 to +7.0V; V(in): -0.3 to +0.3V; 8-bit CMOS micro processing unit |
Hitachi Semiconductor |
| 68 |
HD64180ZP-6 |
6MHz; V(cc) -0.3 to +7.0V; V(in): -0.3 to +0.3V; 8-bit CMOS micro processing unit |
Hitachi Semiconductor |
| 69 |
HD64180ZP-8 |
8MHz; V(cc) -0.3 to +7.0V; V(in): -0.3 to +0.3V; 8-bit CMOS micro processing unit |
Hitachi Semiconductor |
| 70 |
K4D64163HF |
1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
Samsung Electronic |
| 71 |
K4D64163HF-TC33 |
1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
Samsung Electronic |
| 72 |
K4D64163HF-TC36 |
1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
Samsung Electronic |
| 73 |
K4D64163HF-TC40 |
1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
Samsung Electronic |
| 74 |
K4D64163HF-TC50 |
1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
Samsung Electronic |
| 75 |
K4D64163HF-TC60 |
1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
Samsung Electronic |
| 76 |
MC-4516CD641ES |
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
NEC |
| 77 |
MC-4516CD641ES-A10 |
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
NEC |
| 78 |
MC-4516CD641ES-A10L |
128M-byte(16M-word x 64-bit) SDRAM SO DIMM |
NEC |
| 79 |
MC-4516CD641ES-A80 |
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
NEC |
| 80 |
MC-4516CD641ES-A80L |
128M-byte(16M-word x 64-bit) SDRAM SO DIMM |
NEC |
| 81 |
MC-4516CD641PS |
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
NEC |
| 82 |
MC-4516CD641PS-A10 |
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
NEC |
| 83 |
MC-4516CD641PS-A80 |
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
NEC |
| 84 |
MC-45D32CD641 |
32 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
NEC |
| 85 |
MC-45D32CD641KFA-C75 |
32 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
NEC |
| 86 |
MC-45D32CD641KFA-C80 |
32 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
NEC |
| 87 |
MC-45V16AD641 |
16M-WORD BY 64-BIT VirtualChannel SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
NEC |
| 88 |
MC-45V16AD641EF-A10 |
16M-WORD BY 64-BIT VirtualChannel SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
NEC |
| 89 |
MC-45V16AD641EF-A75 |
16M-WORD BY 64-BIT VirtualChannel SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
NEC |
| 90 |
MC-45V16AD641KF-A10 |
16M-WORD BY 64-BIT VirtualChannel SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
NEC |
| | | |
