| No. |
Part Name |
Description |
Manufacturer |
| 61 |
1N3996A |
10W Low-voltage, alloy-junction zener diode with cathode connected to case 5.1V |
Motorola |
| 62 |
1N3997 |
10W Low-voltage, alloy-junction zener diode with cathode connected to case 5.6V |
Motorola |
| 63 |
1N3997A |
10W Low-voltage, alloy-junction zener diode with cathode connected to case 5.6V |
Motorola |
| 64 |
1N3998 |
10W Low-voltage, alloy-junction zener diode with cathode connected to case 6.2V |
Motorola |
| 65 |
1N3998A |
10W Low-voltage, alloy-junction zener diode with cathode connected to case 6.2V |
Motorola |
| 66 |
1N3999 |
10W Low-voltage, alloy-junction zener diode with cathode connected to case 6.8V |
Motorola |
| 67 |
1N3999A |
10W Low-voltage, alloy-junction zener diode with cathode connected to case 6.8V |
Motorola |
| 68 |
1N4000 |
10W Low-voltage, alloy-junction zener diode with cathode connected to case 7.5V |
Motorola |
| 69 |
1N4000A |
10W Low-voltage, alloy-junction zener diode with cathode connected to case 7.5V |
Motorola |
| 70 |
200D,202D |
Wet Tantalum Capacitors, Wet Sintered Anode Components, Capacitor Assemblies, Type 202D Designed to Meet the Performance and Marking Requirements of Military Style CL55 in Accordance with MIL-DTL-3965 |
Vishay |
| 71 |
212R2SR |
Silicon rectifier diode - Controlled avalanche, anode connected to case |
SESCOSEM |
| 72 |
26R2SR |
Silicon rectifier diode - Controlled avalanche, anode connected to case |
SESCOSEM |
| 73 |
28R2SR |
Silicon rectifier diode - Controlled avalanche, anode connected to case |
SESCOSEM |
| 74 |
2N3375 |
Silicon NPN RF Power Transistor, overlay emitter electrode construction |
RCA Solid State |
| 75 |
2N3553 |
Silicon NPN RF Power Transistor, overlay emitter electrode construction |
RCA Solid State |
| 76 |
2N3632 |
Silicon NPN RF Power Transistor, overlay emitter electrode construction |
RCA Solid State |
| 77 |
2N4932 |
Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction |
RCA Solid State |
| 78 |
2N4933 |
Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction |
RCA Solid State |
| 79 |
30R2SR |
Silicon rectifier diode - Controlled avalanche, anode connected to case |
SESCOSEM |
| 80 |
312R2SR |
Silicon rectifier diode - Controlled avalanche, anode connected to case |
SESCOSEM |
| 81 |
36R2SR |
Silicon rectifier diode - Controlled avalanche, anode connected to case |
SESCOSEM |
| 82 |
38R2SR |
Silicon rectifier diode - Controlled avalanche, anode connected to case |
SESCOSEM |
| 83 |
4017 |
Decade Counter/Divider with 10 Decoded Output |
Fairchild Semiconductor |
| 84 |
4017BF |
Decade counter/divider |
TOSHIBA |
| 85 |
4017BP |
Decade counter/divider |
TOSHIBA |
| 86 |
4063BF |
4-BIT Magnitude comparator |
TOSHIBA |
| 87 |
4063BP |
4-BIT Magnitude comparator |
TOSHIBA |
| 88 |
40665 |
Silicon NPN RF Power Transistor, overlay emitter electrode construction |
RCA Solid State |
| 89 |
40666 |
Silicon NPN RF Power Transistor, overlay emitter electrode construction |
RCA Solid State |
| 90 |
40R2SR |
Silicon rectifier diode - Controlled avalanche, anode connected to case |
SESCOSEM |
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