| No. |
Part Name |
Description |
Manufacturer |
| 61 |
TC59S6416BFT/BFTL-80 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM |
TOSHIBA |
| 62 |
TC59S6416BFT/BFTL10 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM |
TOSHIBA |
| 63 |
THM401020SG-80 |
1/048/576 WORDSx40 BIT DYNAMIC RAM MODULE |
TOSHIBA |
| 64 |
THM402020SG-10 |
2/097/152 WORDSx40 BIT DYNAMIC RAM MODULE |
TOSHIBA |
| 65 |
THM402020SG-80 |
2/097/152 WORDSx40 BIT DYNAMIC RAM MODULE |
TOSHIBA |
| 66 |
THM84000L-10 |
4/194/304 WORDSx8 BIT DYNAMIC RAM MODULE |
TOSHIBA |
| 67 |
THM84000L-80 |
4/194/304 WORDSx8 BIT DYNAMIC RAM MODULE |
TOSHIBA |
| 68 |
THM84000S |
4/194/304 WORDSx8 BIT DYNAMIC RAM MODULE |
TOSHIBA |
| 69 |
THM84000S-10 |
4/194/304 WORDSx8 BIT DYNAMIC RAM MODULE |
TOSHIBA |
| 70 |
THM84000S-80 |
4/194/304 WORDSx8 BIT DYNAMIC RAM MODULE |
TOSHIBA |
| 71 |
YTFP250 |
V(dsx): 200V; V(dgr): 200V; V(gss): 20V; 150W; silicon N-channel MOS type field effect effect transistor. For high speed, high current switching applications |
TOSHIBA |
| | | |
