| No. |
Part Name |
Description |
Manufacturer |
| 61 |
CM350DU-5F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 62 |
CM350DU-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 63 |
CM350DU-5F |
Trench Gate Design Dual IGBTMOD�� 350 Amperes/250 Volts |
Powerex Power Semiconductors |
| 64 |
CM400DU-12F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 65 |
CM400DU-12F |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 66 |
CM400DU-12F |
Trench Gate Design Dual IGBTMOD�� 400 Amperes/600 Volts |
Powerex Power Semiconductors |
| 67 |
CM400DU-12H |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 68 |
CM400DU-12H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 69 |
CM400DU-12H |
Dual IGBTMOD 400 Amperes/600 Volts |
Powerex Power Semiconductors |
| 70 |
CM400DU-12NFH |
High Frequency Dual IGBTMOD�� 400 Amperes/600 Volts |
Powerex Power Semiconductors |
| 71 |
CM400DU-24F |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| 72 |
CM400DU-24F |
Dual IGBTMOD 400 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 73 |
CM400DU-34KA |
IGBT Modules:1700V |
Mitsubishi Electric Corporation |
| 74 |
CM400DU-34KA |
Dual IGBTMOD 400 Amperes/1700 Volts |
Powerex Power Semiconductors |
| 75 |
CM400DU-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 76 |
CM400DU-5F |
Trench Gate Design Dual IGBTMOD�� 400 Amperes/250 Volts |
Powerex Power Semiconductors |
| 77 |
CM50DU-24F |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| 78 |
CM50DU-24F |
Trench Gate Design Dual IGBTMOD�� 50 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 79 |
CM50DU-24H |
IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 80 |
CM50DU-24H |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| 81 |
CM50DU-24H |
Dual IGBTMOD�� U-Series Module 50 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 82 |
CM600DU-24F |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| 83 |
CM600DU-24F |
Dual IGBTMOD 600 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 84 |
CM600DU-24NF |
HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 85 |
CM600DU-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 86 |
CM600DU-5F |
Dual IGBTMOD 600 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 87 |
CM75DU-12F |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 88 |
CM75DU-12F |
Trench Gate Design Dual IGBTMOD�� 75 Amperes/600 Volts |
Powerex Power Semiconductors |
| 89 |
CM75DU-12H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 90 |
CM75DU-12H |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| | | |
