| No. |
Part Name |
Description |
Manufacturer |
| 61 |
BAS16W |
High Speed Switching Diode 350mW |
Micro Commercial Components |
| 62 |
BAS16WX |
High Speed Switching Diode 350mW |
Micro Commercial Components |
| 63 |
BYS459-1500 |
High Voltage Damper Diodes Reverse Voltage 1500V Forward Current 6.5A Reverse Recovery Time 350ns |
Vishay |
| 64 |
BYS459B-1500 |
High Voltage Damper Diodes Reverse Voltage 1500V Forward Current 6.5A Reverse Recovery Time 350ns |
Vishay |
| 65 |
BYS459F-1500 |
High Voltage Damper Diodes Reverse Voltage 1500V Forward Current 6.5A Reverse Recovery Time 350ns |
Vishay |
| 66 |
IRF321 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 3.0A. |
General Electric Solid State |
| 67 |
IRF323 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 68 |
IRF331 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
| 69 |
IRF333 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 70 |
IRF351 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 15A. |
General Electric Solid State |
| 71 |
IRF353 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 13A. |
General Electric Solid State |
| 72 |
IRF721 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 3.0A. |
General Electric Solid State |
| 73 |
IRF723 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 74 |
IRF731 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
| 75 |
IRF733 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 76 |
IRFF311 |
Power MOSFET field effect power transistor. Drain-source voltage 350 V. |
General Electric Solid State |
| 77 |
IRFF313 |
Power MOSFET field effect power transistor. Drain-source voltage 350 V. |
General Electric Solid State |
| 78 |
LT211 |
Photo DMOS-FET relay. Input continuous LED current 50 mA, input peak LED current 1000 mA, input LED reverse voltage 5 V. Output load voltage 350 V, output load current 120 mA. |
Letex Technology |
| 79 |
M67749SL |
RF POWER MODULE 350-370MHz, 12.5V, 7W, FM PORTABLE RADIO |
Mitsubishi Electric Corporation |
| 80 |
M68710SL |
RF POWER MODULE 350-380MHz, 6V, 2W, FM PORTABLE RADIO |
Mitsubishi Electric Corporation |
| 81 |
MMBD1501 |
High Conductance Low Leakage Diode 350mW |
Micro Commercial Components |
| 82 |
MMBD1501A |
High Conductance Low Leakage Diode 350mW |
Micro Commercial Components |
| 83 |
MMBD1503 |
High Conductance Low Leakage Diode 350mW |
Micro Commercial Components |
| 84 |
MMBD1503A |
High Conductance Low Leakage Diode 350mW |
Micro Commercial Components |
| 85 |
MMBD1504 |
High Conductance Low Leakage Diode 350mW |
Micro Commercial Components |
| 86 |
MMBD1504A |
High Conductance Low Leakage Diode 350mW |
Micro Commercial Components |
| 87 |
MMBD1505 |
High Conductance Low Leakage Diode 350mW |
Micro Commercial Components |
| 88 |
MMBD1505A |
High Conductance Low Leakage Diode 350mW |
Micro Commercial Components |
| 89 |
MMBD4148CA |
High Conductance Ultra Fast Diode 350mW |
Micro Commercial Components |
| 90 |
MMBD4148CC |
High Conductance Ultra Fast Diode 350mW |
Micro Commercial Components |
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