| No. |
Part Name |
Description |
Manufacturer |
| 61 |
ADXL250JQC |
+-5 g to +-50 g, Low Noise, Low Power, Single/Dual Axis iMEMS Accelerometers |
Analog Devices |
| 62 |
ADXL278 |
Dual-Axis, High-g, MEMS Accelerometers |
Analog Devices |
| 63 |
ADXL362 |
Micropower, 3-Axis, ±2 g/±4 g/±8 g Digital Output MEMS Accelerome |
Analog Devices |
| 64 |
ADXL375 |
3-Axis, ±200 g Digital MEMS Accelerometer |
Analog Devices |
| 65 |
ADXL377 |
3-Axis High g Analog MEMS Accelerometer |
Analog Devices |
| 66 |
AIS1200PS |
MEMS acceleration sensor: single-axis with PSI5 point-to-point interface |
ST Microelectronics |
| 67 |
AIS1200PSTR |
MEMS acceleration sensor: single-axis with PSI5 point-to-point interface |
ST Microelectronics |
| 68 |
AN-139 |
MOS Encoder plus PROM YIELD Quick turnaround keyboard systems - Application Note |
National Semiconductor |
| 69 |
AN-149 |
HANDHELD calculator battery systems - Application Note |
National Semiconductor |
| 70 |
AN-6054 |
Triac Power Controls for Three-Phase Systems - Application Note |
RCA Solid State |
| 71 |
AN643 |
SGS-THOMSON SYSTEMS FOR RECHARGEABLE BATTERIES |
SGS Thomson Microelectronics |
| 72 |
AN727 |
High-Frequency, High-Efficiency Buck Converter Design for Multi-Cell Battery Configured Systems Using Si9167 |
Vishay |
| 73 |
AT97SC3201 |
A Fully integrated security module designed to be integrated into computer systems and other embedded systems. This is a summary document. A complete document is available under NDA. For more information, please contact your local Atmel sa |
Atmel |
| 74 |
AWT1921 |
The AWT 1921 is a four stage monolithic amplifier for use in communication systems that require high gain and output intercept point. |
Anadigics Inc |
| 75 |
AWT921 |
The AWT921 is a monolithic amplifier for use in communication systems that require high gain and output intercept point. |
Anadigics Inc |
| 76 |
BFG196 |
RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz |
Infineon |
| 77 |
BFG19S |
RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz |
Infineon |
| 78 |
BFG235 |
RF-Bipolar - For low-distortion broadband output amplifier stages in wireless systems up to 2 GHz |
Infineon |
| 79 |
BFG90A |
Silicon planar epitaxial NPN transistor, designed for wideband application in CATV and MATV systems up to 2GHz |
Philips |
| 80 |
BFP180 |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) |
Siemens |
| 81 |
BFP180W |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) |
Siemens |
| 82 |
BFP194 |
PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents) |
Siemens |
| 83 |
BFP196 |
RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz |
Infineon |
| 84 |
BFP196W |
RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz |
Infineon |
| 85 |
BFQ19S |
RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz |
Infineon |
| 86 |
BFQ70 |
NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2mA to 20mA) |
Siemens |
| 87 |
BFQ73 |
NPN SILICON RF TRANSISTOR (FOR LOW-NOISE/ LOW-DISTORTION BROADBAND AMPLIFIERS IN ANTENNA AND TELECOMMUNICATIONS SYSTEMS UP TO 2GHz) |
Siemens |
| 88 |
BFQ73S |
NPN SILICON RF TRANSISTOR (FOR LOW-NOISE, LOW-DISTORTION BROADBAND AMPLIFIERS IN ANTENNA AND TELECOMMUNICATIONS SYSTEMS UP TO 2GHz) |
Siemens |
| 89 |
BFR180 |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) |
Siemens |
| 90 |
BFR180W |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) |
Siemens |
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