| No. |
Part Name |
Description |
Manufacturer |
| 61 |
1N4448 |
GLASS-CASE, FAST SWITCHING DIODE Equivalent type 1N914B |
IPRS Baneasa |
| 62 |
1N4449 |
GLASS-CASE, FAST SWITCHING DIODE Equivalent type 1N916B |
IPRS Baneasa |
| 63 |
1N4454 |
GLASS-CASE, FAST SWITCHING DIODE Equivalent type 1N3064 |
IPRS Baneasa |
| 64 |
1N5149 |
Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz |
Motorola |
| 65 |
1N5150 |
Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz |
Motorola |
| 66 |
1N5150A |
Silicon high-frequency step-recovery power varactor device |
Motorola |
| 67 |
1N5151 |
Silicon high-frequency step-recovery power varactor device |
Motorola |
| 68 |
1N5152 |
Silicon high-frequency step-recovery power varactor device |
Motorola |
| 69 |
1N5152A |
Silicon high-frequency step-recovery power varactor device |
Motorola |
| 70 |
1N5153 |
Silicon high-frequency step-recovery power varactor device |
Motorola |
| 71 |
1N5153A |
Silicon high-frequency step-recovery power varactor device |
Motorola |
| 72 |
1N5154 |
Silicon high-frequency step-recovery power varactor, for multiplier applications from 2 to 8.5 GHz |
Motorola |
| 73 |
1N5155 |
Silicon high-frequency step-recovery power varactor, for multiplier applications from 2 to 8.5 GHz |
Motorola |
| 74 |
1N5155A |
Silicon high-frequency step-recovery power varactor device |
Motorola |
| 75 |
1N5156 |
Silicon high-frequency step-recovery power varactor epitaxial-passivated device |
Motorola |
| 76 |
1N5157 |
Silicon high-frequency step-recovery power varactor epitaxial-passivated device |
Motorola |
| 77 |
1N5829 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 20V. Vrsm = 24V. |
USHA India LTD |
| 78 |
1N5830 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 30V. Vrsm = 36V. |
USHA India LTD |
| 79 |
1N5831 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 40V. Vrsm = 48V. |
USHA India LTD |
| 80 |
1N5832 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 20V. Vrsm = 24V. |
USHA India LTD |
| 81 |
1N5833 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 30V. Vrsm = 36V. |
USHA India LTD |
| 82 |
1N5834 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 40V. Vrsm = 48V. |
USHA India LTD |
| 83 |
1N6263 EQUIV |
Silicon Schottky Barrier Diode |
Honey Technology |
| 84 |
1SS356 |
Diodes > High Frequency Diodes > Band switching diodes |
ROHM |
| 85 |
1SS390 |
Diodes > High Frequency Diodes > Band switching diodes |
ROHM |
| 86 |
2-101NU71 |
Low frequency NPN Germanium Transistor |
Tesla Elektronicke |
| 87 |
2-104NU71 |
Low frequency NPN Germanium Transistor |
Tesla Elektronicke |
| 88 |
2-2NU72 |
Low-frequency Power PNP Transistor |
Tesla Elektronicke |
| 89 |
2-2NU73 |
Low-frequency Power PNP Transistor |
Tesla Elektronicke |
| 90 |
2-2NU74 |
Low-frequency germanium power transistor with a power loss of 50 W p-n-p type |
Tesla Elektronicke |
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