| No. |
Part Name |
Description |
Manufacturer |
| 61 |
2N3055 |
Silicon diffused mesa NPN power transistor for high power switching applications and AF amplifiers |
AEG-TELEFUNKEN |
| 62 |
2N3055 |
Diffused NPN silicon LF power transistor with very good second-breakdown properties, for high-power LF power amplifiers, stabilization circuits and power switch applications |
ITT Semiconductors |
| 63 |
2N3133 |
Silicon p-n-p medium power switching transistor |
Mullard |
| 64 |
2N3134 |
Silicon p-n-p medium power switching transistor |
Mullard |
| 65 |
2N350A |
PNP germanium power transistor for economical power switching applications |
Motorola |
| 66 |
2N351A |
PNP germanium power transistor for economical power switching applications |
Motorola |
| 67 |
2N376A |
PNP germanium power transistor for economical power switching applications |
Motorola |
| 68 |
2N3773AR |
NPN silicon power transistor. 16Amp, 140V, 150Watt. High power audio, disk head positioners and other linear applications. Power switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. |
USHA India LTD |
| 69 |
2N4036 |
Silicon p-n-p medium power switching transistor |
Mullard |
| 70 |
2N5435 |
PNP germanium power switching transistor |
Motorola |
| 71 |
2N5436 |
PNP germanium power switching transistor |
Motorola |
| 72 |
2N5437 |
PNP germanium power switching transistor |
Motorola |
| 73 |
2N5438 |
PNP germanium power switching transistor |
Motorola |
| 74 |
2N5439 |
PNP germanium power switching transistor |
Motorola |
| 75 |
2N5440 |
PNP germanium power switching transistor |
Motorola |
| 76 |
2N669 |
PNP germanium power transistor for economical power switching circuits and commercial grade power amplifier applications |
Motorola |
| 77 |
2SA1020 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS, POWER SWITCHING APPLICATIONS. |
TOSHIBA |
| 78 |
2SA1213 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 79 |
2SA1241 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 80 |
2SA1296 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 81 |
2SA1297 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 82 |
2SA1298 |
Transistor Silicon PNP Epitaxial (PCT process) Low Frequency Power Amplifier Application Power Switching Applications |
TOSHIBA |
| 83 |
2SA1315 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 84 |
2SA1428 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 85 |
2SA1429 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 86 |
2SA1500 |
For power switching |
Panasonic |
| 87 |
2SA1550 |
For power switching |
Panasonic |
| 88 |
2SA1680 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 89 |
2SA1681 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 90 |
2SA1734 |
Transistor Silicon PNP Triple Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
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