No. |
Part Name |
Description |
Manufacturer |
61 |
BFR91 |
Epitaxial planar NPN transistor, designed for VHF-UHF medium level amplifier up to 1.5GHz |
SGS-ATES |
62 |
BFR91H |
Epitaxial planar NPN transistor, designed for VHF-UHF wide-band application |
SGS-ATES |
63 |
BFR96 |
Epitaxial planar NPN transistor for VHF-UHF high level amplifier |
SGS-ATES |
64 |
BFR96H |
Epitaxial planar NPN transistor for VHF-UHF high level amplifier |
SGS-ATES |
65 |
BFW94 |
Epitaxial planar NPN transistor for ultra linear VHF-UHF amplifier |
SGS-ATES |
66 |
CA4800 |
VHF-UHF Linear Amplifier 17dB Gain, wide bandwidth 10-1000MHz, optimized for 24V power supply |
TRW |
67 |
CA4812 |
VHF-UHF Linear Amplifier 17dB Gain, wide bandwidth 10-1000MHz, optimized for 12V power supply |
TRW |
68 |
CA4815 |
VHF-UHF Linear Amplifier 17dB Gain, wide bandwidth 10-1000MHz, optimized for 15V power supply |
TRW |
69 |
CA5800 |
VHF-UHF Linear Amplifier 10-1000MHz, 15dB Gain, optimized for 28V power supply |
TRW |
70 |
CA5815 |
VHF-UHF Linear Amplifier 16dB Gain, 10-1000MHz |
TRW |
71 |
J2N918 |
Silicon NPN transistor, VHF-UHF amplification and oscillation (chip) |
SESCOSEM |
72 |
K4H560838F-UC |
256Mb F-die DDR400 SDRAM Specification |
Samsung Electronic |
73 |
K4H560838F-UC/LA2 |
256Mb F-die DDR SDRAM Specification |
Samsung Electronic |
74 |
K4H560838F-UC/LAA |
256Mb F-die DDR SDRAM Specification |
Samsung Electronic |
75 |
K4H560838F-UC/LB0 |
256Mb F-die DDR SDRAM Specification |
Samsung Electronic |
76 |
K4H560838F-UC/LB3 |
256Mb F-die DDR SDRAM Specification |
Samsung Electronic |
77 |
K4H560838F-UCC4 |
256Mb F-die DDR400 SDRAM Specification |
Samsung Electronic |
78 |
K4H560838F-UCCC |
256Mb F-die DDR400 SDRAM Specification |
Samsung Electronic |
79 |
K4H561638F-UC |
256Mb F-die DDR SDRAM Specification |
Samsung Electronic |
80 |
K4H561638F-UC/LA2 |
256Mb F-die DDR SDRAM Specification |
Samsung Electronic |
81 |
K4H561638F-UC/LAA |
256Mb F-die DDR SDRAM Specification |
Samsung Electronic |
82 |
K4H561638F-UC/LB0 |
256Mb F-die DDR SDRAM Specification |
Samsung Electronic |
83 |
K4H561638F-UC/LB3 |
256Mb F-die DDR SDRAM Specification |
Samsung Electronic |
84 |
K4H561638F-UCC4 |
256Mb F-die DDR400 SDRAM Specification |
Samsung Electronic |
85 |
K4H561638F-UCCC |
256Mb F-die DDR400 SDRAM Specification |
Samsung Electronic |
86 |
K4S280432F-UC |
128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
Samsung Electronic |
87 |
K4S280432F-UC75 |
128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
Samsung Electronic |
88 |
K4S280432F-UL75 |
128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
Samsung Electronic |
89 |
K4S280832F-UC75 |
128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
Samsung Electronic |
90 |
K4S280832F-UL75 |
128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
Samsung Electronic |
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